BSC016N06NSATMA1

Mfr. #:: BSC016N06NSATMA1
製造商:: Infineon Technologies
描述:: MOSFET N-CH 60V 30A TDSON-8
生命週期:: 製造商新產品
數據表:: BSC016N06NSATMA1 數據表
交貨:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:: BSC016N06NSATMA1 更多信息

產品屬性
屬性值

製造商: 英飛凌科技

產品分類: 晶體管 - FET、MOSFET - 單

系列: 優化MOS

打包: 捲軸

部分別名: BSC016N06NS BSC016N06NSXT SP000924882

安裝方式: 貼片/貼片

商品名: 優化MOS

包裝盒: TDSON-8

技術: 矽

通道數: 1 Channel

配置: 單四漏三源

晶體管型: 1 N-Channel

鈀功耗: 139 W

最高工作溫度: + 150 C

最低工作溫度: - 55 C

秋季時間: 9 ns

上升時間: 9 ns

VGS-柵極-源極-電壓: 20 V

Id 連續漏極電流: 100 A

Vds-漏-源-擊穿電壓: 60 V

VGS-th-Gate-Source-Threshold-Voltage: 2.8 V

Rds-On-Drain-Source-Resistance: 1.6 mOhms

晶體管極性: N通道

典型關斷延遲時間: 35 ns

典型開啟延遲時間: 19 ns

Qg-門電荷: 71 nC

正向跨導最小值: 140 S / 70 S

Tags: BSC016N06, BSC016, BSC01, BSC0, BSC

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSC016N06NSATMA1 更多信息

OptiMOS™ 5 Power MOSFETs: Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.

20-60V OptiMOS Power MOSFETs: Infineon's 20-60V OptiMOS Power MOSFETs are innovative products that serve the market needs throughout the whole energy supply chain. OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). These devices consistently set the benchmark in key specifications for power system design, including leading on-state resistance and Figure of Merit characteristics which lead to reduced power losses and improved overall efficiency. These help customers that face the challenge of growing power demand, higher efficiency and lower cost.Learn More

Market price

型號	製造商	描述	庫存	價格
BSC016N06NSATMA1 DISTI # BSC016N06NSATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 60V 30A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	19997In Stock	1000:$1.1500 500:$1.3879 100:$1.7845 10:$2.2210 1:$2.4600
BSC016N06NSATMA1 DISTI # BSC016N06NSATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 60V 30A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	19997In Stock	1000:$1.1500 500:$1.3879 100:$1.7845 10:$2.2210 1:$2.4600
BSC016N06NSATMA1 DISTI # BSC016N06NSATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 60V 30A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	10000In Stock	5000:$1.0010
BSC016N06NSATMA1 DISTI # BSC016N06NSATMA1	Infineon Technologies AG	Trans MOSFET N-CH 60V 30A 8-Pin TDSON EP T/R - Tape and Reel (Alt: BSC016N06NSATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	5000:$0.8059 10000:$0.7769 20000:$0.7489 30000:$0.7239 50000:$0.7109
BSC016N06NSATMA1 DISTI # BSC016N06NS	Infineon Technologies AG	Trans MOSFET N-CH 60V 30A 8-Pin TDSON EP T/R (Alt: BSC016N06NS) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel	Asia - 0
BSC016N06NSATMA1 DISTI # 79X1327	Infineon Technologies AG	MOSFET, N-CH, 60V, 100A, PG-TDSON- 8,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0014ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V RoHS Compliant: Yes	0	1:$2.0600 10:$1.7700 25:$1.6700 50:$1.5600 100:$1.4600 250:$1.3500 500:$1.3000 1000:$1.2600
BSC016N06NSATMA1. DISTI # 27AC1071	Infineon Technologies AG	Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0014ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V,Power Dissipation Pd:139W,No. of Pins:8Pins RoHS Compliant: Yes	0	1:$0.8060 10000:$0.7770 20000:$0.7490 30000:$0.7240 50000:$0.7110
BSC016N06NS DISTI # 726-BSC016N06NS	Infineon Technologies AG	MOSFET N-Ch 60V 100A DSON-8 OptiMOS RoHS: Compliant	143	1:$2.0600 10:$1.7500 100:$1.4000 500:$1.2300 1000:$1.0200
BSC016N06NSATMA1 DISTI # 726-BSC016N06NSATMA1	Infineon Technologies AG	MOSFET N-Ch 60V 100A DSON-8 OptiMOS RoHS: Compliant	0	1:$2.0600 10:$1.7500 100:$1.4000 500:$1.2300 1000:$1.0200
BSC016N06NSATMA1 DISTI # 2432702	Infineon Technologies AG	MOSFET, N CH, 60V, 100A, TDSON-8 RoHS: Compliant	0	1:£1.8900 10:£1.4900 100:£1.2000 250:£1.1200 500:£1.1000
BSC016N06NSATMA1 DISTI # 2432702	Infineon Technologies AG	MOSFET, N CH, 60V, 100A, TDSON-8 RoHS: Compliant	0	1:$3.2600 10:$2.7800 100:$2.3300
BSC016N06NSATMA1 DISTI # 2432702RL	Infineon Technologies AG	MOSFET, N CH, 60V, 100A, TDSON-8 RoHS: Compliant	0	1:$3.2600 10:$2.7800 100:$2.3300

相關產品

圖片	型號	描述
	Mfr.#: BSC016N06NSATMA1 OMO.#: OMO-BSC016N06NSATMA1	MOSFET N-Ch 60V 100A DSON-8 OptiMOS
	Mfr.#: BSC016N04LS G OMO.#: OMO-BSC016N04LS-G	MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3
	Mfr.#: BSC016N04LSGATMA1 OMO.#: OMO-BSC016N04LSGATMA1	MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3
	Mfr.#: BSC016N03LSGXT/BKN OMO.#: OMO-BSC016N03LSGXT-BKN-1190	INSTOCK
	Mfr.#: BSC016N03LSGXT OMO.#: OMO-BSC016N03LSGXT-1190	MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3
	Mfr.#: BSC016N03MS OMO.#: OMO-BSC016N03MS-1190	Transistor: N-MOSFET, unipolar, 30V, 100A, 125W, PG-TDSON-8
	Mfr.#: BSC016N03MSG OMO.#: OMO-BSC016N03MSG-1190	Power Field-Effect Transistor, 28A I(D), 30V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
	Mfr.#: BSC016N03MSGXT OMO.#: OMO-BSC016N03MSGXT-1190	全新原裝
	Mfr.#: BSC016N06NSATMA1 OMO.#: OMO-BSC016N06NSATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 60V 30A TDSON-8
	Mfr.#: BSC016N06NSTATMA1 OMO.#: OMO-BSC016N06NSTATMA1-INFINEON-TECHNOLOGIES	DIFFERENTIATED MOSFETS