CGHV1J025D-GP4

CGHV1J025D-GP4
Mfr. #:
CGHV1J025D-GP4
製造商:
N/A
描述:
RF JFET Transistors GaN HEMT Die DC-18GHz, 25 Watt
生命週期:
製造商新產品
數據表:
CGHV1J025D-GP4 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
更多信息:
CGHV1J025D-GP4 更多信息
產品屬性
屬性值
製造商:
科沃
產品分類:
射頻 JFET 晶體管
RoHS:
Y
晶體管類型:
HEMT
技術:
氮化鎵碳化矽
獲得:
20 dB
晶體管極性:
N通道
Vds - 漏源擊穿電壓:
50 V
Vgs - 柵源擊穿電壓:
145 V
Id - 連續漏極電流:
2.5 A
輸出功率:
70 W
最低工作溫度:
- 40 C
最高工作溫度:
+ 85 C
Pd - 功耗:
64 W
安裝方式:
螺絲安裝
包裝/案例:
NI-360
打包:
托盤
配置:
單身的
工作頻率:
3.7 GHz
工作溫度範圍:
- 40 C to + 85 C
系列:
QPD
品牌:
科沃
開發套件:
QPD1015LPCB401
產品類別:
射頻 JFET 晶體管
出廠包裝數量:
25
子類別:
晶體管
Vgs th - 柵源閾值電壓:
- 2.8 V
Tags
CGHV1J02, CGHV1J, CGHV1, CGHV, CGH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
RF MOSFET HEMT 40V DIE
***hardson RFPD
RF POWER TRANSISTOR
GaN HEMTs
Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.
型號 製造商 描述 庫存 價格
CGHV1J025D-GP4
DISTI # V36:1790_22799863
Cree, Inc.RF POWER TRANSISTOR0
  • 25000:$46.5200
  • 5000:$48.2700
  • 500:$52.3800
  • 50:$53.1400
CGHV1J025D-GP4
DISTI # CGHV1J025D-GP4-ND
WolfspeedRF MOSFET HEMT 40V DIE
RoHS: Compliant
Min Qty: 10
Container: Tray
120In Stock
  • 10:$41.7200
CGHV1J025D-GP4
DISTI # 941-CGHV1J025D
Cree, Inc.RF JFET Transistors GaN HEMT Die DC-18GHz, 25 Watt
RoHS: Compliant
0
  • 10:$46.8100
CGHV1J025D-GP4
DISTI # CGHV1J025D-GP4
WolfspeedRF POWER TRANSISTOR
RoHS: Compliant
0
  • 50:$42.6500
圖片 型號 描述
CMPA1D1E025F

Mfr.#: CMPA1D1E025F

OMO.#: OMO-CMPA1D1E025F

RF Amplifier GaN MMIC Power Amp 13.75-14.5GHz 25Watt
CGHV1J070D-GP4

Mfr.#: CGHV1J070D-GP4

OMO.#: OMO-CGHV1J070D-GP4

RF JFET Transistors GaN HEMT Die DC-18GHz, 70 Watt
CGHV1J006D-GP4

Mfr.#: CGHV1J006D-GP4

OMO.#: OMO-CGHV1J006D-GP4

RF JFET Transistors GaN HEMT Die DC-18GHz, 6 Watt
CGHV1J006D-GP4

Mfr.#: CGHV1J006D-GP4

OMO.#: OMO-CGHV1J006D-GP4-WOLFSPEED

RF MOSFET HEMT 40V DIE
CGHV1J070D-GP4

Mfr.#: CGHV1J070D-GP4

OMO.#: OMO-CGHV1J070D-GP4-WOLFSPEED

RF POWER TRANSISTOR
CMPA1D1E025F

Mfr.#: CMPA1D1E025F

OMO.#: OMO-CMPA1D1E025F-WOLFSPEED

IC AMP 13.75GHZ-14.5GHZ 440208
可用性
庫存:
Available
訂購:
1500
輸入數量:
CGHV1J025D-GP4的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
10
US$46.81
US$468.10
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