IPD60R280P7ATMA1

Mfr. #:: IPD60R280P7ATMA1
製造商:: Infineon Technologies
描述:: MOSFET N-CH 600V 12A TO252-3
生命週期:: 製造商新產品
數據表:: IPD60R280P7ATMA1 數據表
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更多信息:: IPD60R280P7ATMA1 更多信息

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Tags: IPD60R280P, IPD60R28, IPD60R2, IPD60R, IPD60, IPD6, IPD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPD60R280P7ATMA1 描述

***ure Electronics: Single N-Channel 650 V 280 mOhm 18 nC CoolMOS Power Mosfet - DPAK

***i-Key: MOSFET N-CH 600V 12A TO252-3

***ronik: N-CH 600V 12A 280mOhm TO252-3

***et Europe: LOW POWER_NEW

***ark: Mosfet, N-Ch, 600V, 12A, 53W, To-252; Transistor Polarity:n Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.214Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 600V, 12A, 53W, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.214ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipation Pd:53W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS P7 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET CAN N, 600V, 12A, 53W, TO-252; Polarità Transistor:Canale N; Corrente Continua di Drain Id:12A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.214ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.5V; Dissipazione di Potenza Pd:53W; Modello Case Transistor:TO-252; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS P7 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

***ineon: The 600V CoolMOS P7 is the successor to the 600V CoolMOS P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS 7th generation platform ensure its high efficiency. | Summary of Features: 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G | Benefits: Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency | Target Applications: TV power supply; Industrial SMPS; Server; Telecom; Lighting

IPD60R280P7ATMA1 更多信息

600V CoolMOS P7 MOSFETs: Infineon 600V CoolMOS P7 MOSFETs are 7th generation devices and utilize revolutionary technology for high voltage power MOSFETs. The transistors are designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 combines the benefits of a fast switching SJ MOSFET with excellent ease of use. The 600V P7 feature very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Extremely low switching and conduction losses make switching applications even more efficient, compact and cooler.

CoolMOS™ 7 Superjunction MOSFETs: Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.

CoolMOS™ Power Transistors: Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

CoolMOS™ P7 MOSFETs: Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies.

Market price

型號	製造商	描述	庫存	價格
IPD60R280P7ATMA1 DISTI # V36:1790_18205319	Infineon Technologies AG	600V CoolMOS P7 Power Transistor	0	2500000:$0.6905 1250000:$0.6909 250000:$0.7365 25000:$0.8251 2500:$0.8403
IPD60R280P7ATMA1 DISTI # IPD60R280P7ATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 600V 12A TO252-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2521In Stock	1000:$0.9296 500:$1.1219 100:$1.3656 10:$1.6990 1:$1.8900
IPD60R280P7ATMA1 DISTI # IPD60R280P7ATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 600V 12A TO252-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2521In Stock	1000:$0.9296 500:$1.1219 100:$1.3656 10:$1.6990 1:$1.8900
IPD60R280P7ATMA1 DISTI # IPD60R280P7ATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 600V 12A TO252-3 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	2500In Stock	12500:$0.7884 5000:$0.8092 2500:$0.8403
IPD60R280P7ATMA1 DISTI # SP001658316	Infineon Technologies AG	LOW POWER_NEW (Alt: SP001658316) RoHS: Compliant Min Qty: 2500	Europe - 2500	25000:€0.7619 15000:€0.8139 10000:€0.9339 5000:€1.1189 2500:€1.3339
IPD60R280P7ATMA1 DISTI # IPD60R280P7ATMA1	Infineon Technologies AG	LOW POWER_NEW - Tape and Reel (Alt: IPD60R280P7ATMA1) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	25000:$0.7529 15000:$0.7659 10000:$0.7929 5000:$0.8229 2500:$0.8539
IPD60R280P7ATMA1 DISTI # 93AC7115	Infineon Technologies AG	MOSFET, N-CH, 600V, 12A, 53W, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.214ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes	2500	1000:$0.8690 500:$1.0400 250:$1.1200 100:$1.1900 50:$1.2900 25:$1.3900 10:$1.4900 1:$1.7600
IPD60R280P7ATMA1 DISTI # 726-IPD60R280P7ATMA1	Infineon Technologies AG	MOSFET LOW POWER_NEW RoHS: Compliant	3152	1:$1.7400 10:$1.4800 100:$1.1800 500:$1.0300 1000:$0.8600 2500:$0.8010 5000:$0.7710 10000:$0.7410
IPD60R280P7ATMA1 DISTI # IPD60R280P7	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,600V,8A,53W,PG-TO252-3	1907	500:$0.9600 100:$1.0400 25:$1.1500 5:$1.3000 1:$1.4400
IPD60R280P7ATMA1 DISTI # XSKDRABV0021236	Infineon Technologies AG	RoHS: Compliant	7500 in Stock0 on Order	7500:$1.0400 2500:$1.1100
IPD60R280P7ATMA1 DISTI # 2986467	Infineon Technologies AG	MOSFET, N-CH, 600V, 12A, 53W, TO-252 RoHS: Compliant	2500	1000:$1.1900 500:$1.3300 250:$1.4500 100:$1.5500 25:$1.8900 5:$2.1100
IPD60R280P7ATMA1 DISTI # 2986467	Infineon Technologies AG	MOSFET, N-CH, 600V, 12A, 53W, TO-252	2500	500:£0.7460 250:£0.8010 100:£0.8550 10:£1.1100 1:£1.4300

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