STP40N60M2

Mfr. #:: STP40N60M2
製造商:: STMicroelectronics
描述:: MOSFET N-CH 600V 0.078Ohm typ. 34A MDmesh M2
生命週期:: 製造商新產品
數據表:: STP40N60M2 數據表
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更多信息:: STP40N60M2 更多信息 STP40N60M2 Product Details

產品屬性
屬性值

製造商：: 意法半導體

產品分類：: MOSFET

RoHS：: Y

技術：: 矽

安裝方式：: 通孔

包裝/案例：: TO-220-3

通道數：: 1 Channel

晶體管極性：: N通道

Vds - 漏源擊穿電壓：: 650 V

Id - 連續漏極電流：: 34 A

Rds On - 漏源電阻：: 88 mOhms

Vgs th - 柵源閾值電壓：: 3 V

Vgs - 柵源電壓：: 25 V

Qg - 門電荷：: 57 nC

最低工作溫度：: - 55 C

最高工作溫度：: + 150 C

Pd - 功耗：: 250 W

配置：: 單身的

打包：: 管子

系列：: STP40N60M2

晶體管類型：: 1 N-Channel

品牌：: 意法半導體

秋季時間：: 11 ns

產品類別：: MOSFET

上升時間：: 13.5 ns

出廠包裝數量：: 1000

子類別：: MOSFET

典型關斷延遲時間：: 96 ns

典型的開啟延遲時間：: 20.5 ns

單位重量：: 0.011640 oz

Tags: STP40N6, STP40N, STP40, STP4, STP

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

STP40N60M2 描述

***icroelectronics: N-channel 600 V, 0.078 Ohm typ., 34 A MDmesh M2 Power MOSFET in TO-220 package

***ure Electronics: Single N-Channel 650 V 0.088 O 250 W Flange Mount Power Mosfet - TO-220-3

***ark: MOSFET, N-CH, 600V, 34A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:34A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

***r Electronics: Power Field-Effect Transistor, 34A I(D), 600V, 0.088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***icroelectronics: N-channel 600 V, 0.078 Ohm typ., 34 A MDmesh M2 Power MOSFET in TO-220FP package

***ical: Trans MOSFET N-CH 600V 34A 3-Pin(3+Tab) TO-220FP Tube

***ark: MOSFET, N-CH, 600V, 34A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:34A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

***icroelectronics: N-channel 600 V, 0.097 Ohm, 29 A FDmesh(TM) II Power MOSFET (with fast diode) TO-220FP

***et: Trans MOSFET N-CH 600V 29A 3-Pin(3+Tab) TO-220FP Tube

***ure Electronics: N-Channel 600 V 105 mOhm MDmesh II Power Mosfet - TO-220FP

***ponent Stockers USA: 29 A 600 V 0.11 ohm N-CHANNEL Si POWER MOSFET TO-220AB

***r Electronics: Power Field-Effect Transistor, 29A I(D), 600V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N CH, 600V, 29A, TO 220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:29A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.097ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:40W; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (19-Dec-2012)

***icroelectronics: N-channel 600 V, 0.092 Ohm, 29 A, MDmesh(TM) II Power MOSFET in TO-220FP

***ical: Trans MOSFET N-CH 600V 29A 3-Pin(3+Tab) TO-220FP Tube

***r Electronics: Power Field-Effect Transistor, 29A I(D), 600V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***nell: MOSFET, N CH, 600V, 29.0A, TO 220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 29A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.092ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 40W; Transistor Case Style: TO-220FP; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; MSL: -; SVHC: No SVHC (17-Dec-2015)

***ure Electronics: Single N-Channel 600 V 99 mOhm 70 nC CoolMOS Power Mosfet - TO-220-3FP

***ical: Trans MOSFET N-CH 600V 37.9A 3-Pin(3+Tab) TO-220FP Tube

***ark: Mosfet, N-Ch, 600V, 37.9A, To-220Fp; Transistor Polarity:n Channel; Continuous Drain Current Id:37.9A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.089Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes

***ineon SCT: Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-TO220-3, RoHS

***ineon: Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles

***emi: N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 37 A, 99 mΩ, TO-220

***Yang: Trans MOSFET N-CH 600V 37A 3-Pin TO-220 Tube - Rail/Tube

***r Electronics: Power Field-Effect Transistor, 37A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***enic: 600V 37A 87m´Î@10V18.5A 357W 3.5V@250uA 13.9pF@380V N Channel 2.604nF@380V 88nC@10V -55¡Í~+150¡Í@(Tj) TO-220 MOSFETs ROHS

***rchild Semiconductor: SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET easy-drive series offers slightly slower rise and fall times compared to the SuperFET II MOSFET series. Noted by the "E" part number suffix, this family helps manage EMI issues and allows for easier design implementation. For faster switching in applications where switching losses must be at an absolute minimum, please consider the SuperFET II MOSFET series.

***emi: N-Channel Power MOSFET, SUPREMOS®, FAST, 600 V, 36 A, 90 mΩ, TO-220F

***Yang: Trans MOSFET N-CH 600V 36A 3-Pin TO-220F Rail - Rail/Tube

***r Electronics: Power Field-Effect Transistor, 36A I(D), 600V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***rchild Semiconductor: The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior switching performance and ruggedness.This SupreMOS MOSFET fits the industry’s AC-DC SMPS requirements for PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications.

STP40N60M2 更多信息

Standard Products: STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.

MDmesh™ II Power MOSFETs: STMicroelectronics 600 and 650V MDmesh™ M2 series of super-junction Power MOSFETs are optimized for soft-switching applications (LLC resonant power supplies) thanks to the optimized trade-off between RDS(on), gate charge (Qg) and intrinsic capacitances (Ciss, Coss). They also are suitable for PFC applications, especially at light loads.

Market price

型號	製造商	描述	庫存	價格
STP40N60M2 DISTI # V36:1790_06564733	STMicroelectronics	Trans MOSFET N-CH 600V 34A 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant	0
STP40N60M2 DISTI # 497-14222-5-ND	STMicroelectronics	MOSFET N-CH 600V 34A TO220 RoHS: Compliant Min Qty: 1 Container: Tube	373In Stock	1000:$5.5242 500:$6.3426 100:$7.5702 50:$8.3886 1:$10.2300
STP40N60M2 DISTI # STP40N60M2	STMicroelectronics	Trans MOSFET N-CH 600V 34A 3-Pin TO-220 Tube (Alt: STP40N60M2) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	1:€3.5900 10:€3.2900 25:€3.1900 50:€2.9900 100:€2.8900 500:€2.7900 1000:€2.5900
STP40N60M2 DISTI # STP40N60M2	STMicroelectronics	Trans MOSFET N-CH 600V 34A 3-Pin TO-220 Tube - Rail/Tube (Alt: STP40N60M2) RoHS: Compliant Min Qty: 1000 Container: Tube	Americas - 0	1000:$5.4900 2000:$5.2900 4000:$4.9900 6000:$4.7900 10000:$4.6900
STP40N60M2 DISTI # 45AC7723	STMicroelectronics	Trans MOSFET N-CH 600V 34A 3-Pin TO-220 Tube - Bulk (Alt: 45AC7723) RoHS: Compliant Min Qty: 1 Container: Bulk	Americas - 0	1:$8.8500 10:$8.0000 25:$7.6300 50:$7.1300 100:$6.3700 250:$5.2000 500:$4.8900
STP40N60M2 DISTI # 45AC7723	STMicroelectronics	MOSFET, N-CH, 600V, 34A, TO-220AB,Transistor Polarity:N Channel,Continuous Drain Current Id:34A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.078ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes	250	500:$4.8300 1:$5.0000 10:$5.0000 25:$5.0000 50:$5.0000 100:$5.0000 250:$5.0000
STP40N60M2 DISTI # 511-STP40N60M2	STMicroelectronics	MOSFET N-CH 600V 0.078Ohm typ. 34A MDmesh M2 RoHS: Compliant	0	1:$8.8500 10:$8.0000 25:$7.6300 100:$6.6300 250:$6.3300 500:$5.7700 1000:$5.0300
STP40N60M2 DISTI # STP40N60M2	STMicroelectronics	Transistor: N-MOSFET,unipolar,600V,22A,250W,TO220-3	25	1:$11.5600 3:$9.9500 10:$7.9900 50:$7.1800
STP40N60M2 DISTI # TMOSP11520	STMicroelectronics	N-CH 600V 34A88mOhmTO220-3	Stock DE - 0Stock HK - 0Stock US - 0	50:$4.9400 100:$4.6600 150:$4.3800 200:$3.9500 300:$3.8200
STP40N60M2 DISTI # 2807298	STMicroelectronics	MOSFET, N-CH, 600V, 34A, TO-220AB RoHS: Compliant	0	500:$9.4200 100:$11.2500 50:$12.4600 1:$15.1900
STP40N60M2 DISTI # 2807298	STMicroelectronics	MOSFET, N-CH, 600V, 34A, TO-220AB RoHS: Compliant	0	500:£4.4900 250:£4.9300 100:£5.1600 10:£5.9400 1:£7.4600
STP40N60M2 DISTI # XSKDRABV0050301	STMicroelectronics	RoHS: Compliant	750 in Stock0 on Order	750:$5.0520 150:$5.4120

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