STP40N65M2 vs STP40N60M2 vs STP40N60

 
PartNumberSTP40N65M2STP40N60M2STP40N60
DescriptionMOSFET N-channel 650 V, 0.087 Ohm typ., 32 A MDmesh M2 Power MOSFET in TO-220 packageMOSFET N-CH 600V 0.078Ohm typ. 34A MDmesh M2
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-220-3TO-220-3-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage650 V650 V-
Id Continuous Drain Current32 A34 A-
Rds On Drain Source Resistance87 mOhms88 mOhms-
Vgs th Gate Source Threshold Voltage2 V3 V-
Vgs Gate Source Voltage25 V25 V-
Qg Gate Charge56.5 nC57 nC-
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation250 W250 W-
ConfigurationSingleSingleSingle
Channel ModeEnhancement--
TradenameMDmesh--
PackagingTubeTubeTube
SeriesSTP40N65M2STP40N60M2MDmesh M2
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandSTMicroelectronicsSTMicroelectronics-
Fall Time12 ns11 ns11 ns
Product TypeMOSFETMOSFET-
Rise Time10 ns13.5 ns13.5 ns
Factory Pack Quantity10001000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time96.5 ns96 ns96 ns
Typical Turn On Delay Time15 ns20.5 ns20.5 ns
Unit Weight0.011640 oz0.011640 oz0.011640 oz
Minimum Operating Temperature-- 55 C- 55 C
Package Case--TO-220-3
Pd Power Dissipation--250 W
Vgs Gate Source Voltage--25 V
Id Continuous Drain Current--34 A
Vds Drain Source Breakdown Voltage--650 V
Vgs th Gate Source Threshold Voltage--3 V
Rds On Drain Source Resistance--88 mOhms
Qg Gate Charge--57 nC
Top