IPB051NE8NG

IPB051NE8NG
Mfr. #:
IPB051NE8NG
製造商:
Rochester Electronics, LLC
描述:
Power Field-Effect Transistor, 100A I(D), 85V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
生命週期:
製造商新產品
數據表:
IPB051NE8NG 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
產品屬性
屬性值
Tags
IPB051, IPB05, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 85V 100A 3-Pin(2+Tab) TO-263
***i-Key
N-CHANNEL POWER MOSFET
***el Nordic
Contact for details
*** International
IPB051NE8NG INFINEO
型號 製造商 描述 庫存 價格
IPB051NE8N G
DISTI # IPB051NE8NG
Infineon Technologies AGTrans MOSFET N-CH 85V 100A 3-Pin(2+Tab) TO-263 - Bulk (Alt: IPB051NE8NG)
RoHS: Not Compliant
Min Qty: 220
Container: Bulk
Americas - 0
  • 1100:$1.3900
  • 2200:$1.3900
  • 440:$1.4900
  • 660:$1.4900
  • 220:$1.5900
IPB051NE8NGATMA1
DISTI # IPB051NE8NGATMA1
Infineon Technologies AG- Bulk (Alt: IPB051NE8NGATMA1)
Min Qty: 205
Container: Bulk
Americas - 0
  • 1025:$1.4900
  • 2050:$1.4900
  • 410:$1.5900
  • 615:$1.5900
  • 205:$1.6900
IPB051NE8N G
DISTI # 726-IPB051NE8NG
Infineon Technologies AGMOSFET N-Ch 85V 100A D2PAK-2
RoHS: Compliant
0
    IPB051NE8NGInfineon Technologies AGPower Field-Effect Transistor, 100A I(D), 85V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RoHS: Compliant
    775
    • 1000:$1.5000
    • 500:$1.5800
    • 100:$1.6400
    • 25:$1.7100
    • 1:$1.8500
    IPB051NE8NGATMA1Infineon Technologies AGPower Field-Effect Transistor, 100A I(D), 85V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RoHS: Not Compliant
    33000
    • 1000:$1.6100
    • 500:$1.6900
    • 100:$1.7600
    • 25:$1.8400
    • 1:$1.9800
    圖片 型號 描述
    IPB054N06N3 G

    Mfr.#: IPB054N06N3 G

    OMO.#: OMO-IPB054N06N3-G

    MOSFET N-Ch 60V 80A D2PAK-2 OptiMOS 3
    IPB055N03L G

    Mfr.#: IPB055N03L G

    OMO.#: OMO-IPB055N03L-G

    MOSFET N-Ch 30V 50A D2PAK-2 OptiMOS 3
    IPB054N08N3GATMA1-CUT TAPE

    Mfr.#: IPB054N08N3GATMA1-CUT TAPE

    OMO.#: OMO-IPB054N08N3GATMA1-CUT-TAPE-1190

    全新原裝
    IPB050N06NG

    Mfr.#: IPB050N06NG

    OMO.#: OMO-IPB050N06NG-1190

    全新原裝
    IPB052N04NG

    Mfr.#: IPB052N04NG

    OMO.#: OMO-IPB052N04NG-1190

    Power Field-Effect Transistor, 70A I(D), 40V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    IPB054N06N3G

    Mfr.#: IPB054N06N3G

    OMO.#: OMO-IPB054N06N3G-1190

    Trans MOSFET N-CH 60V 80A 3-Pin TO-263 T/R (Alt: IPB054N06N3 G)
    IPB054N08N3

    Mfr.#: IPB054N08N3

    OMO.#: OMO-IPB054N08N3-1190

    全新原裝
    IPB054N08N3G,054N08N

    Mfr.#: IPB054N08N3G,054N08N

    OMO.#: OMO-IPB054N08N3G-054N08N-1190

    全新原裝
    IPB05CN10NG

    Mfr.#: IPB05CN10NG

    OMO.#: OMO-IPB05CN10NG-1190

    全新原裝
    IPB054N08N3 G

    Mfr.#: IPB054N08N3 G

    OMO.#: OMO-IPB054N08N3-G-126

    IGBT Transistors MOSFET N-Ch 80V 80A D2PAK-2 OptiMOS 3
    可用性
    庫存:
    Available
    訂購:
    5000
    輸入數量:
    IPB051NE8NG的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格(美元)
    數量
    單價
    小計金額
    1
    US$0.00
    US$0.00
    10
    US$0.00
    US$0.00
    100
    US$0.00
    US$0.00
    500
    US$0.00
    US$0.00
    1000
    US$0.00
    US$0.00
    從...開始
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