 |  | | |
| PartNumber | IPB054N06N3 G | IPB050N06NGATMA1 | IPB052N04NGATMA1 |
| Description | MOSFET N-Ch 60V 80A D2PAK-2 OptiMOS 3 | MOSFET N-CH 60V 100A TO-263 | MOSFET N-CH 40V 70A TO263-3 |
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 80 A | - | - |
| Rds On Drain Source Resistance | 4.4 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 82 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 115 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | OptiMOS | - | - |
| Packaging | Reel | - | - |
| Height | 4.4 mm | - | - |
| Length | 10 mm | - | - |
| Series | OptiMOS 3 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 9.25 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 47 S | - | - |
| Fall Time | 9 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 68 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 32 ns | - | - |
| Typical Turn On Delay Time | 24 ns | - | - |
| Part # Aliases | IPB054N06N3GATMA1 IPB54N6N3GXT SP000446782 | - | - |
| Unit Weight | 0.068654 oz | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB057N06N | MOSFET N-Ch 60V 45A D2PAK-2 | |
| IPB054N06N3 G | MOSFET N-Ch 60V 80A D2PAK-2 OptiMOS 3 | ||
| IPB054N06N3GATMA1 | MOSFET N-Ch 60V 80A D2PAK-2 OptiMOS 3 | ||
| IPB057N06NATMA1 | MOSFET N-Ch 60V 45A D2PAK-2 | ||
| IPB054N08N3GATMA1 | MOSFET N-Ch 80V 80A D2PAK-2 OptiMOS 3 | ||
| IPB054N08N3 G | MOSFET N-Ch 80V 80A D2PAK-2 OptiMOS 3 | ||
| IPB055N03L G | MOSFET N-Ch 30V 50A D2PAK-2 OptiMOS 3 | ||
| IPB054N06N3GATMA1 | MOSFET N-CH 60V 80A TO263-3 | ||
| IPB050N06NGATMA1 | MOSFET N-CH 60V 100A TO-263 | ||
| IPB052N04NGATMA1 | MOSFET N-CH 40V 70A TO263-3 | ||
| IPB054N08N3GATMA1 | MOSFET N-CH 80V 80A TO263-3 | ||
| IPB055N03LGATMA1 | MOSFET N-CH 30V 50A TO-263-3 | ||
| IPB05CN10N G | MOSFET N-CH 100V 100A TO263-3 | ||
| IPB05N03LA | MOSFET N-CH 25V 80A D2PAK | ||
| IPB05N03LA G | MOSFET N-CH 25V 80A D2PAK | ||
| IPB057N06NATMA1 | Darlington Transistors MOSFET N-Ch 60V 45A D2PAK-2 | ||
Infineon Technologies |
IPB055N03LGATMA1 | MOSFET LV POWER MOS | |
| IPB05CN10N G | MOSFET N-Ch 100V 100A D2PAK-2 | ||
| IPB054N06N3GATMA1-CUT TAPE | 全新原裝 | ||
| IPB054N08N3GATMA1-CUT TAPE | 全新原裝 | ||
| IPB054N08N3GXT | Trans MOSFET N-CH 80V 80A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB054N08N3GATMA1) | ||
| IPB050N06N G | MOSFET N-Ch 60V 100A D2PAK-2 | ||
| IPB050N06NG | 全新原裝 | ||
| IPB051NE8NG | Power Field-Effect Transistor, 100A I(D), 85V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
| IPB051NE8NG(051NE8N) | 全新原裝 | ||
| IPB051NE8NGATMA1 | - Bulk (Alt: IPB051NE8NGATMA1) | ||
| IPB052N04N | 全新原裝 | ||
| IPB052N04NG | Power Field-Effect Transistor, 70A I(D), 40V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
| IPB054N06N3-G | 全新原裝 | ||
| IPB054N06N3G | Trans MOSFET N-CH 60V 80A 3-Pin TO-263 T/R (Alt: IPB054N06N3 G) | ||
| IPB054N06N3GATMA1 , 2SD1 | 全新原裝 | ||
| IPB054N08N3 | 全新原裝 | ||
| IPB054N08N3G | MOSFET, N-CH, 80V, 80A, TO-263-3 | ||
| IPB054N08N3G,054N08N | 全新原裝 | ||
| IPB054N08N3GS | 全新原裝 | ||
| IPB055N03LG | 全新原裝 | ||
| IPB057N06N | Trans MOSFET N-CH 60V 45A | ||
| IPB057N06N3 G | 全新原裝 | ||
| IPB057N07N | 全新原裝 | ||
| IPB05CN10NG | 全新原裝 | ||
| IPB05N03 | 全新原裝 | ||
| IPB05N03AL | 全新原裝 | ||
| IPB05N03L | 全新原裝 | ||
| IPB05N03L E3045 | 全新原裝 | ||
| IPB05N03L E3045A | 全新原裝 | ||
| IPB05N03LA IPB05N03L | 全新原裝 | ||
| IPB05N03LAG | MOSFET N-Ch 25V 80A D2PAK-2 | ||
| IPB054N06N3 G | IGBT Transistors MOSFET N-Ch 60V 80A D2PAK-2 OptiMOS 3 | ||
| IPB052N04N G | IGBT Transistors MOSFET N-Ch 40V 70A D2PAK-2 | ||
| IPB054N08N3 G | IGBT Transistors MOSFET N-Ch 80V 80A D2PAK-2 OptiMOS 3 |