STGW80H65DFB

Mfr. #:: STGW80H65DFB
製造商:: STMicroelectronics
描述:: IGBT 650V 120A 469W TO-247
生命週期:: 製造商新產品
數據表:: STGW80H65DFB 數據表
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更多信息:: STGW80H65DFB 更多信息 STGW80H65DFB Product Details

產品屬性
屬性值

製造商: 意法半導體

產品分類: IGBT - 單

系列: 600-650V IGBTs

打包: 管子

單位重量: 1.340411 oz

安裝方式: 通孔

包裝盒: TO-247-3

輸入類型: 標準

安裝型: 通孔

供應商-設備-包: TO-247

配置: 單身的

最大功率: 469W

反向恢復時間trr: 85ns

電流收集器 Ic-Max: 120A

電壓收集器發射極擊穿最大值: 650V

IGBT型: 海溝場停止

電流收集器脈衝Icm: 240A

Vce-on-Max-Vge-Ic: 2V @ 15V, 80A

開關能源: 2.1mJ (on), 1.5mJ (off)

柵極電荷: 414nC

Td-on-off-25°C: 84ns/280ns

測試條件: 400V, 80A, 10 Ohm, 15V

鈀功耗: 469 W

最高工作溫度: + 175 C

最低工作溫度: - 55 C

集電極-發射極-電壓-VCEO-Max: 650 V

集電極-發射極-飽和-電壓: 1.6 V

25-C 時的連續集電極電流: 120 A

柵極-發射極-漏電流: 250 nA

最大柵極發射極電壓: 20 V

連續集電極電流 Ic-Max: 80 A

Tags: STGW80H, STGW80, STGW8, STGW, STG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

STGW80H65DFB 描述

***Components: In a Tube of 30, STMicroelectronics STGW80H65DFB IGBT, 120 A 650 V, 3-Pin TO-247

***ure Electronics: HB Series 650 V 80 A High Speed Trench Gate Field-Stop IGBT - TO-247

***ical: Trans IGBT Chip N-CH 650V 120A 470000mW 3-Pin(3+Tab) TO-247 Tube

***p One Stop Global: Trans IGBT Chip N-CH 650V 120A 3-Pin(3+Tab) TO-247 Tube

***et Europe: Trans IGBT Chip N-CH 650V 120A 3-Pin TO-247 Tube

***ied Electronics & Automation: IGBT N-Ch 650V 80A High-Speed TO247

***i-Key: IGBT 650V 120A 469W TO-247

***ark: IGBT, SINGLE, 650V, 120A, TO-247; DC Collector Current:120A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:469W; Collector Emitter Voltage V(br)ceo:650V; No. of Pins:3Pins; Operating Temperature Max:175�C RoHS Compliant: Yes

***ment14 APAC: Prices include import duty and tax. IGBT, SINGLE, 650V, 120A, TO-247; DC Collector Current:120A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:469W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:HB Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (07-Jul-2017)

***nell: IGBT SINGOLO 650V 120A TO-247; Corrente di Collettore CC:120A; Tensione Saturaz Collettore-Emettitore Vce(on):1.6V; Dissipazione di Potenza Pd:469W; Tensione Collettore-Emettitore V(br)ceo:650V; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:HB Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (07-Jul-2017)

STGW80H65DFB 更多信息

IGBT HB/HB2 Series: STMicroelectronics IGBT HB/HB2 Series IGBTs combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary trench gate field-stop (TGFS) structure.

Market price

型號	製造商	描述	庫存	價格
STGW80H65DFB DISTI # V36:1790_06560788	STMicroelectronics	Trans IGBT Chip N-CH 650V 120A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	0
STGW80H65DFB DISTI # 497-14368-ND	STMicroelectronics	IGBT 650V 120A 469W TO-247 RoHS: Compliant Min Qty: 1 Container: Tube	On Order	1020:$4.8225 510:$5.4525 120:$6.1770 30:$7.0277 1:$8.0700
STGW80H65DFB-4 DISTI # STGW80H65DFB-4-ND	STMicroelectronics	IGBT BIPO 650V 80A TO247 RoHS: Compliant Min Qty: 600 Container: Tube	Temporarily Out of Stock	600:$9.9325
STGW80H65DFB DISTI # STGW80H65DFB	STMicroelectronics	Trans IGBT Chip N-CH 650V 120A 3-Pin TO-247 Tube (Alt: STGW80H65DFB) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	1:€4.7900 10:€4.3900 25:€4.1900 50:€3.9900 100:€3.8900 500:€3.6900 1000:€3.4900
STGW80H65DFB DISTI # STGW80H65DFB	STMicroelectronics	Trans IGBT Chip N-CH 650V 120A 3-Pin TO-247 Tube - Rail/Tube (Alt: STGW80H65DFB) RoHS: Compliant Min Qty: 600 Container: Tube	Americas - 0	600:$4.3900 1200:$4.1900 2400:$3.9900 3600:$3.8900 6000:$3.7900
STGW80H65DFB DISTI # STGW80H65DFB-4	STMicroelectronics	Trans IGBT Chip N-CH 650V 120A 3-Pin TO-247 Tube - Rail/Tube (Alt: STGW80H65DFB-4) RoHS: Compliant Min Qty: 600 Container: Tube	Americas - 0	600:$8.5900 1200:$8.1900 2400:$7.8900 3600:$7.4900 6000:$7.3900
STGW80H65DFB DISTI # 45AC7608	STMicroelectronics	Trans IGBT Chip N-CH 650V 120A 3-Pin TO-247 Tube - Bulk (Alt: 45AC7608) RoHS: Compliant Min Qty: 1 Container: Bulk	Americas - 0	1:$7.1400 10:$6.4600 25:$6.1600 50:$5.7500 100:$5.3400 250:$5.1100 500:$4.6500
STGW80H65DFB-4 DISTI # STGW80H65DFB-4	STMicroelectronics	Trans IGBT Chip N-CH 650V 120A 4-Pin TO-247 Tube (Alt: STGW80H65DFB-4) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	1:€8.7900 10:€8.0900 25:€7.6900 50:€7.3900 100:€7.1900 500:€6.8900 1000:€6.3900
STGW80H65DFB DISTI # 45AC7608	STMicroelectronics	IGBT, SINGLE, 650V, 120A, TO-247,DC Collector Current:120A,Collector Emitter Saturation Voltage Vce(on):1.6V,Power Dissipation Pd:469W,Collector Emitter Voltage V(br)ceo:650V,No. of Pins:3Pins,Operating Temperature Max:175°C RoHS Compliant: Yes	0	500:$4.7000 250:$5.1500 100:$5.3900 50:$5.8000 25:$6.2100 10:$6.5100 1:$7.2000
STGW80H65DFB-4 DISTI # 26Y5820	STMicroelectronics	PTD HIGH VOLTAGE	0	1:$7.2500
STGW80H65DFB DISTI # 511-STGW80H65DFB	STMicroelectronics	IGBT Transistors Trench gte FieldStop IGBT 650V 80A RoHS: Compliant	0	1:$7.1300 10:$6.4500 25:$6.1500 100:$5.3400 250:$5.1000 500:$4.6500 1000:$4.0500
STGW80H65DFB-4 DISTI # 511-STGW80H65DFB-4	STMicroelectronics	IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 80 A high speed	0	1:$12.1700 10:$11.1900 25:$10.7300 100:$9.4500 250:$8.9900 500:$8.4100 1000:$7.7100
STGW80H65DFB	ACTIVE COMPNTS/DIODES		25
STGW80H65DFB DISTI # 7925814P	STMicroelectronics	IGBT N-CH 650V 80A HIGH-SPEED TO247, TU	384	20:£4.5800 10:£4.6700
STGW80H65DFB DISTI # 2807180	STMicroelectronics	IGBT, SINGLE, 650V, 120A, TO-247 RoHS: Compliant	472	1020:$6.3200 510:$7.2600 120:$8.3300 30:$9.5900 1:$11.1400
STGW80H65DFB DISTI # 2807180	STMicroelectronics	IGBT, SINGLE, 650V, 120A, TO-247 RoHS: Compliant	472	100:£4.2300 50:£4.5600 10:£4.8800 5:£5.6600 1:£6.2000

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