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| PartNumber | STGW80H65DFB-4 | STGW80H65FB | STGW80H65DFB |
| Description | IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 80 A high speed | IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 80 A high speed | IGBT Transistors Trench gte FieldStop IGBT 650V 80A |
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| Technology | Si | Si | Si |
| Series | STGW80H65DFB-4 | STGW80H65FB | STGW80H65DFB |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| Factory Pack Quantity | 600 | 600 | 600 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| RoHS | - | Y | Y |
| Package / Case | - | TO-247-3 | TO-247-3 |
| Mounting Style | - | Through Hole | Through Hole |
| Configuration | - | Single | Single |
| Collector Emitter Voltage VCEO Max | - | 650 V | 650 V |
| Collector Emitter Saturation Voltage | - | 1.6 V | 1.6 V |
| Maximum Gate Emitter Voltage | - | 20 V | 20 V |
| Continuous Collector Current at 25 C | - | 120 A | 120 A |
| Pd Power Dissipation | - | 469 W | 469 W |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Maximum Operating Temperature | - | + 175 C | + 175 C |
| Packaging | - | Tube | Tube |
| Continuous Collector Current Ic Max | - | 80 A | 80 A |
| Gate Emitter Leakage Current | - | 250 nA | 250 nA |
| Unit Weight | - | 1.340411 oz | 1.340411 oz |