IPB65R190C6

Mfr. #:: IPB65R190C6
製造商:: Infineon Technologies
描述:: Darlington Transistors MOSFET N-Ch 700V 20.2A D2PAK-2 CoolMOS C6
生命週期:: 製造商新產品
數據表:: IPB65R190C6 數據表
交貨:: DHL FedEx Ups TNT EMS
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ECAD Model:

產品屬性
屬性值

製造商: 英飛凌科技

產品分類: 晶體管 - FET、MOSFET - 單

系列: CoolMOS C6

打包: 捲軸

部分別名: IPB65R190C6ATMA1 IPB65R190C6XT SP000863890

單位重量: 0.139332 oz

安裝方式: 貼片/貼片

商品名: 酷摩

包裝盒: TO-252-3

技術: 矽

通道數: 1 Channel

配置: 單身的

晶體管型: 1 N-Channel

鈀功耗: 151 W

最高工作溫度: + 150 C

最低工作溫度: - 55 C

秋季時間: 10 ns

上升時間: 12 ns

VGS-柵極-源極-電壓: 20 V

Id 連續漏極電流: 20.2 A

Vds-漏-源-擊穿電壓: 700 V

Rds-On-Drain-Source-Resistance: 190 mOhms

晶體管極性: N通道

典型關斷延遲時間: 133 nS

Qg-門電荷: 73 nC

Tags: IPB65R190C6, IPB65R19, IPB65R1, IPB65, IPB6, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB65R190C6 描述

***ical: Trans MOSFET N-CH 700V 20.2A 3-Pin(2+Tab) D2PAK T/R

***ineon SCT: CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO263-3, RoHS

***ineon: CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting

***ure Electronics: E Series N-Channel 600 V 0.18 O 86 nC Surface Mount Power Mosfet - D2PAK

***ical: Trans MOSFET N-CH 600V 21A 3-Pin(2+Tab) D2PAK

*** Electronics: MOSFET 600V 180mOhm@10V 21A N-Ch E-SRS

***icroelectronics: N-channel 650 V, 0.160 Ohm typ., 18 A MDmesh M5 Power MOSFET in D2PAK package

***sible Micro: (CP22-1029) Transistor 650V N-Channel Mosfet D2PAK STB20N65M5

***ure Electronics: N-Channel 710 V 190 mO 36 nC Surface Mount Power Mosfet - TO-263 (D2PAK)

***ical: Trans MOSFET N-CH 650V 18A 3-Pin(2+Tab) D2PAK T/R

***r Electronics: Power Field-Effect Transistor, 18A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ure Electronics: Single N-Channel 550 V 199 mOhm 45 nC CoolMOS Power Mosfet - TO-263-3

***ical: Trans MOSFET N-CH 550V 17A 3-Pin(2+Tab) D2PAK T/R

***ineon: CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power

***ment14 APAC: MOSFET, N-CH, 550V, 17A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:550V; On Resistance Rds(on):0.18ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:139W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +150°C

***ical: Trans MOSFET N-CH 500V 19A 3-Pin(2+Tab) D2PAK

*** Electronics: VISHAY SIHB20N50E-GE3 MOSFET, N CHANNEL, 500V, 19A, TO-263-3

***ure Electronics: MOSFET 500V Vds 30V Vgs D2PAK (TO-263)

***S: French Electronic Distributor since 1988

***nell: MOSFET, N CHANNEL, 500V, 19A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 19A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.16ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 179W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: E Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited

***ure Electronics: E Series N Channel 600 V 0.158 O 95 nC Surface Mount Power Mosfet - D2PAK

***ical: Trans MOSFET N-CH 600V 23A 3-Pin(2+Tab) D2PAK

***nell: MOSFET, N CH, 600V, 23A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 23A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.132ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -; Pow

***icroelectronics: N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh M2 Power MOSFETs in D2PAK package

***ure Electronics: N-Channel 600 V 22 A 0.15 Ohm Surface Mount MDmesh II Plus Mosfet - D2PAK

***ical: Trans MOSFET N-CH 600V 22A 3-Pin(2+Tab) D2PAK T/R

***r Electronics: Power Field-Effect Transistor, 22A I(D), 600V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Market price

型號	製造商	描述	庫存	價格
IPB65R190C6ATMA1 DISTI # 30704142	Infineon Technologies AG	Trans MOSFET N-CH 700V 20.2A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	10000	6000:$1.3368 4000:$1.3903 2000:$1.4284 1000:$1.6042
IPB65R190C6ATMA1 DISTI # IPB65R190C6ATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 650V 20.2A TO263 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Limited Supply - Call
IPB65R190C6ATMA1 DISTI # IPB65R190C6ATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 650V 20.2A TO263 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
IPB65R190C6ATMA1 DISTI # IPB65R190C6ATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 650V 20.2A TO263 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
IPB65R190C6ATMA1 DISTI # C1S322000264777	Infineon Technologies AG	Trans MOSFET N-CH 700V 20.2A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	10000	1000:$1.7300
IPB65R190C6 DISTI # 726-IPB65R190C6	Infineon Technologies AG	MOSFET N-Ch 700V 20.2A D2PAK-2 CoolMOS C6 RoHS: Compliant	0	1:$3.0300 10:$2.5700 100:$2.2300 250:$2.1200 500:$1.9000 1000:$1.6000
IPB65R190C6ATMA1 DISTI # N/A	Infineon Technologies AG	MOSFET HIGH POWER_LEGACY	0

相關產品

圖片	型號	描述
	Mfr.#: IPB65R660CFDA OMO.#: OMO-IPB65R660CFDA	MOSFET N-Ch 650V 6A D2PAK-2
	Mfr.#: IPB65R660CFDAATMA1 OMO.#: OMO-IPB65R660CFDAATMA1	MOSFET N-Ch 650V 6A D2PAK-2
	Mfr.#: IPB65R310CFDATMA2 OMO.#: OMO-IPB65R310CFDATMA2-INFINEON-TECHNOLOGIES	LOW POWER_LEGACY
	Mfr.#: IPB65R660CFDAXT OMO.#: OMO-IPB65R660CFDAXT-1190	Trans MOSFET N-CH 650V 6A 3-Pin(2+Tab) TO-263 T/R - Tape and Reel (Alt: IPB65R660CFDAATMA1)
	Mfr.#: IPB65R110CFDA 65F6110A OMO.#: OMO-IPB65R110CFDA-65F6110A-1190	全新原裝
	Mfr.#: IPB65R150CFDA OMO.#: OMO-IPB65R150CFDA-1190	全新原裝
	Mfr.#: IPB65R190C6 65C6190 OMO.#: OMO-IPB65R190C6-65C6190-1190	全新原裝
	Mfr.#: IPB65R190C7 65C7190 OMO.#: OMO-IPB65R190C7-65C7190-1190	全新原裝
	Mfr.#: IPB65R420CFDA OMO.#: OMO-IPB65R420CFDA-1190	全新原裝
	Mfr.#: IPB65R660CFDATMA1 OMO.#: OMO-IPB65R660CFDATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 650V 6A TO263

可用性

庫存:: Available
訂購:: 3000
輸入數量:

IPB65R190C6的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]

參考價格（美元）

數量
單價
小計金額

1: ~~US$2.40~~; ~~US$2.40~~

10: ~~US$2.28~~; ~~US$22.80~~

100: ~~US$2.16~~; ~~US$216.00~~

500: ~~US$2.04~~; ~~US$1 020.00~~

1000: ~~US$1.92~~; ~~US$1 920.00~~

由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。

從...開始

IPB65R190C6 4
IPB65R19 15
IPB65R1 34
IPB65 74
IPB6 183
IPB 1339

IPB65R190C6

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes