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FGH40N65UFDTU

FGH40N65UFDTU
Mfr. #:
FGH40N65UFDTU
製造商:
ON Semiconductor / Fairchild
描述:
IGBT Transistors N-ch / 40A 650V
生命週期:
製造商新產品
數據表:
FGH40N65UFDTU 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
更多信息:
FGH40N65UFDTU 更多信息
產品屬性
屬性值
製造商：
安森美半導體
產品分類：
IGBT晶體管
RoHS：
Y
技術：
矽
包裝/案例：
TO-247AB-3
安裝方式：
通孔
配置：
單身的
集電極-發射極電壓 VCEO 最大值：
650 V
最大柵極發射極電壓：
20 V
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
系列：
FGH40N65UFD
打包：
管子
連續集電極電流 Ic 最大值：
80 A
高度：
20.6 mm
長度：
15.6 mm
寬度：
4.7 mm
品牌：
安森美半導體/飛兆半導體
產品類別：
IGBT晶體管
出廠包裝數量：
450
子類別：
IGBT
單位重量：
0.225401 oz
Tags
FGH40N65UFDT, FGH40N65, FGH40N6, FGH40N, FGH40, FGH4, FGH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N=-CH 650V 80A 290000mW 3-Pin(3+Tab) TO-247AB Tube
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild®’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.
***nell
IGBT,N CH,W DIODE,650V,80A,TO247AB; Transistor Type:IGBT; DC Collector Current:80A; Collector Emitter Voltage Vces:650V; Power Dissipation Pd:290W; Collector Emitter Voltage V(br)ceo:650V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:290W
*** Source Electronics
Trans IGBT Chip N-CH 600V 80A 290000mW 3-Pin(3+Tab) TO-247 Tube / IGBT 600V 80A 290W TO247
***ure Electronics
FGH40N60UFD Series 600 V 80 A Flange Mount Field Stop IGBT - TO-247
***-Wing Technology
FAIRCHILD SEMICONDUCTOR FGH40N60UFDTU IGBT Single Transistor, General Purpose, 80 A, 600 V, 290 W, 600 V, TO-247AB, 3 Pins
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder, microwave oven, telecom, ESS and PFC applications where low conduction and switching losses are essential.
***nell
IGBT,N CH,W DIODE,600V,80A,TO247; Transistor Type:IGBT; DC Collector Current:80A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:290W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:290W
*** Source Electronics
IGBT 600V 80A 290W TO247 / Trans IGBT Chip N-CH 600V 80A 290000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
FGH40N60SFD Series 600 V 80 A Flange Mount Field Stop IGBT - TO-247
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder, microwave oven, telecom, ESS and PFC applications where low conduction and switching losses are essential.
***ical
Trans IGBT Chip N=-CH 650V 80A 268000mW 3-Pin(3+Tab) TO-247 Tube
***ark
650V FIELD STOP TRENCH IGBT - TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB
***ure Electronics
FGH40T65UPD Series 650 V 40 A Field Stop Trench IGBT - TO-247-3
***rchild Semiconductor
Using innovative field stop trench IGBT technology, Fairchild’s new series of field stop trench IGBTs offer optimum performance for solar inverter, UPS, welder, and digital power generator where low conduction and switching losses are essential.
***p One Stop Global
Trans IGBT Chip N-CH 600V 80A 250000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
STGW Series Ultra Fast Free Wheeling Diode Through Hole IGBT - TO-247-3
***nell
IGBT, TO-247; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 250W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Te
*** Stop Electro
Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247
***ark
Igbt, Single, 650V, 80A, To-247; Dc Collector Current:80A; Collector Emitter Saturation Voltage Vce(On):1.35V; Power Dissipation Pd:230W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:To-247; No. Of Pins:3Pins; Rohs Compliant: Yes |Infineon IHW40N65R5XKSA1
***ineon SCT
Infineon combines the industry leading performance of the TRENCHSTOP™ 5 family with the technology innovation of the reverse conducting RC-H IGBTs to create a new generation of best-in-class devices, PG-TO247-3, RoHS
***ineon
Infineon combines the industry leading performance of the TRENCHSTOP 5 family with the technology innovation of the reverse conducting RC-H IGBTs to create a new generation of best-in-class devices. With a monolithically integrated diode, the 650V RC-H5 IGBTs are perfectly suited for soft switching applications such as induction cooking stoves and inverterized microwave ovens, but are also suitable for designs which require some hard switching capabilities as well. | Summary of Features: Lowest V CE(sat) and optimized E off for loss reduction up to 30% compared to previous generation; 650V blocking voltage; Hard switching capable | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature for higher device reliability; 50V higher voltage possible for increased reliability; Performs well in designs with higher switching frequencies up to 40kHz | Target Applications: Induction cooking stoves; Inverterized microwave ovens; Other resonant switching topologies
***ure Electronics
IHW50N65R5 Series 650 V 80 A 282 W Reverse Conducting IGBT - PG-TO-247-3
***ark
Igbt, Single, 650V, 80A, To-247; Dc Collector Current:80A; Collector Emitter Saturation Voltage Vce(On):1.35V; Power Dissipation Pd:282W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:To-247; No. Of Pins:3Pins; Rohs Compliant: Yes |Infineon IHW50N65R5XKSA1
***ineon SCT
Infineon combines the industry leading performance of the TRENCHSTOP™ 5 family with the technology innovation of the reverse conducting RC-H IGBTs to create a new generation of best-in-class devices, PG-TO247-3, RoHS
***ineon
Infineon combines the industry leading performance of the TRENCHSTOP 5 family with the technology innovation of the reverse conducting RC-H IGBTs to create a new generation of best-in-class devices. With a monolithically integrated diode, the 650V RC-H5 IGBTs are perfectly suited for soft switching applications such as induction cooking stoves and inverterized microwave ovens, but are also suitable for designs which require some hard switching capabilities as well. | Summary of Features: Lowest V CE(sat) and optimized E off for loss reduction up to 30% compared to previous generation; 650V blocking voltage; Hard switching capable | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature for higher device reliability; 50V higher voltage possible for increased reliability; Performs well in designs with higher switching frequencies up to 40kHz | Target Applications: Induction cooking stoves; Inverterized microwave ovens; Other resonant switching topologies
Field Stop IGBTs
ON Semiconductor Field Stop (FS) IGBTs offer optimum performance with low conduction and switching losses. These IGBTs feature high current handling capability, positive temperature coefficient, tight parameter distribution, and a wide safe operating area. The FS IGBTs come with increased breakdown voltage that improves reliability where negative ambient temperatures are present. As the temperature decreases the IGBT and FRD blocking voltage also decreases that makes the devices particularly beneficial for PV solar inverters used in colder climates. These IGBTs provide fast and soft recovery that reduces power dissipation and achieves low turn-on and turn-off losses.
FGAFx0N60 Field Stop IGBTs
ON Semiconductor FGAFx0N60 650V Field Stop IGBTs use a novel field stop IGBT technology. These IGBTs feature high current capability, low saturation voltage, high input impedance, and fast switching. The FGAFx0N60 IGBTs offer the optimum performance for solar inverters, UPS, welder, and PFC applications that require low conduction and switching losses.
型號 製造商 描述 庫存 價格
FGH40N65UFDTU-F085
DISTI # V99:2348_14141032		ON SemiconductorN-CH / 40A 650V IGBT180
  • 2500:$2.3210
  • 1000:$2.4470
  • 500:$2.8529
  • 250:$3.1549
  • 100:$3.3230
  • 10:$3.7760
  • 1:$4.3370
FGH40N65UFDTU
DISTI # FGH40N65UFDTU-ND		ON SemiconductorIGBT 650V 80A 290W TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		450In Stock
  • 1350:$1.8669
  • 900:$2.2136
  • 450:$2.4670
  • 10:$3.1740
  • 1:$3.5300
FGH40N65UFDTU-F085
DISTI # FGH40N65UFDTU-F085-ND		ON SemiconductorIGBT 650V 40A 290W TO247
RoHS: Compliant
Min Qty: 450
Container: Tube		Temporarily Out of Stock
  • 450:$3.6540
FGH40N65UFDTU
DISTI # 31022047		ON Semiconductor650V, 40A FIELD STOP IGBT450
  • 250:$2.2560
  • 100:$2.3808
  • 30:$2.7456
FGH40N65UFDTU-F085
DISTI # 26630747		ON SemiconductorN-CH / 40A 650V IGBT450
  • 450:$3.2123
FGH40N65UFDTU-F085
DISTI # 25943369		ON SemiconductorN-CH / 40A 650V IGBT180
  • 100:$3.3120
  • 10:$3.7630
  • 3:$4.3200
FGH40N65UFDTU
DISTI # FGH40N65UFDTU		ON SemiconductorTrans IGBT Chip N-CH 650V 80A 3-Pin(3+Tab) TO-247AB Tube - Rail/Tube (Alt: FGH40N65UFDTU)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 450:$1.5900
  • 900:$1.5900
  • 1800:$1.5900
  • 2700:$1.5900
  • 4500:$1.4900
FGH40N65UFDTU_F085
DISTI # FGH40N65UFDTU-F085		ON SemiconductorTrans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube - Rail/Tube (Alt: FGH40N65UFDTU-F085)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 450:$2.3900
  • 900:$2.3900
  • 1800:$2.3900
  • 2700:$2.2900
  • 4500:$2.2900
FGH40N65UFDTU
DISTI # 64R3075		ON SemiconductorFSPIGBT TO247 40A 650V / TUBE0
  • 1:$3.6900
  • 10:$2.9900
  • 100:$2.4800
  • 500:$2.2400
  • 1000:$1.9100
  • 2500:$1.8200
  • 10000:$1.7200
FGH40N65UFDTU-F085
DISTI # 48AC1099		ON SemiconductorFS P TO247 40A 650V AUTO / TUBE0
  • 1:$5.1000
  • 100:$4.2000
  • 250:$3.8600
  • 500:$3.6000
  • 1000:$3.3900
FGH40N65UFDTU
DISTI # 512-FGH40N65UFDTU		ON SemiconductorIGBT Transistors N-ch / 40A 650V
RoHS: Compliant		163
  • 1:$3.3700
  • 10:$2.8600
  • 100:$2.4800
  • 250:$2.3500
  • 500:$2.1100
FGH40N65UFDTU-F085
DISTI # 512-FGH40N65UFDTF085		ON SemiconductorIGBT Transistors N-ch / 40A 650V IGBT
RoHS: Compliant		192
  • 1:$4.9800
  • 10:$4.2300
  • 100:$3.6600
  • 250:$3.4800
  • 500:$3.1200
  • 1000:$2.6300
  • 2500:$2.5000
FGH40N65UFDTU
DISTI # 7599282P		ON SemiconductorTRANSISTOR IGBT N-CH 650V 80A TO247AB, TU172
  • 10:£1.9600
  • 50:£1.7800
  • 150:£1.6100
  • 300:£1.4800
FGH40N65UFDTU
DISTI # 7599282		ON SemiconductorTRANSISTOR IGBT N-CH 650V 80A TO247AB, EA122
  • 1:£3.2800
  • 10:£1.9600
  • 50:£1.7800
  • 150:£1.6100
  • 300:£1.4800
FGH40N65UFDTU
DISTI # C1S541901585576		ON SemiconductorIGBT Chip450
  • 450:$2.9000
FGH40N65UFDTU_F085
DISTI # C1S541901619138		ON SemiconductorTrans IGBT Chip N-CH 650V 80A 290000mW Automotive 3-Pin(3+Tab) TO-247AB Rail
RoHS: Compliant		180
  • 100:$3.3120
  • 10:$3.7630
  • 1:$4.3200
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可用性
庫存:
527
訂購:
2510
輸入數量:
FGH40N65UFDTU的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$4.06
US$4.06
10
US$3.45
US$34.50
100
US$2.99
US$299.00
250
US$2.83
US$707.50
500
US$2.54
US$1 270.00
1000
US$2.39
US$2 390.00
由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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