IRF7799L2TRPBF

Mfr. #:: IRF7799L2TRPBF
製造商:: Infineon Technologies
描述:: MOSFET 250V N-CH HEXFET 38mOhms 110nC
生命週期:: 製造商新產品
數據表:: IRF7799L2TRPBF 數據表
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ECAD Model:

產品屬性
屬性值

製造商: 紅外線

產品分類: 集成電路芯片

打包: 捲軸

安裝方式: 貼片/貼片

商品名: 直接場效應晶體管

包裝盒: DirectFET-9

技術: 矽

通道數: 1 Channel

配置: 單六角漏極八路源

晶體管型: 1 N-Channel

鈀功耗: 125 W

最高工作溫度: + 175 C

最低工作溫度: - 55 C

秋季時間: 26.6 ns

上升時間: 33.5 ns

VGS-柵極-源極-電壓: 30 V

Id 連續漏極電流: 35 A

Vds-漏-源-擊穿電壓: 250 V

Rds-On-Drain-Source-Resistance: 32 mOhms

晶體管極性: N通道

典型關斷延遲時間: 73.9 ns

典型開啟延遲時間: 36.3 ns

Qg-門電荷: 110 nC

通道模式: 增強

Tags: IRF77, IRF7, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF7799L2TRPBF 描述

***ical: Trans MOSFET N-CH Si 250V 6.6A 15-Pin Direct-FET L8 T/R

***et Europe: Trans MOSFET N-CH 250V 6.6A 15-Pin Direct-FET L8 T/R

***ied Electronics & Automation: MOSFET; 250V, 200A, 1.5 MOHM, 200NC QG

***i-Key: MOSFET N-CH 250V DIRECTFET L8

***ark: N MOSFET, 250V, 6.6A, DIRECTFET L8; Transistor Polarity:N Channel; Continuous Drain Current Id:6.6A; Drain Source Voltage Vds:250V; On Resistance Rds(on):0.032ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:4V ;RoHS Compliant: Yes

***ernational Rectifier: A 250V Single N-Channel HEXFET Power MOSFET in a DirectFET L8 package rated at 35 amperes optimized with low on resistance for applications such as active ORing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.

***ineon: Benefits: RoHS Compliant; Qualified Industrial; Qualified MSL1; Low Profile (less than 0.7 mm); Dual Sided Cooling; Optimized for Synchronous Rectification; Low Conduction Losses; High Cdv/dt Immunity | Target Applications: Battery Operated Drive; Load Switch High Side

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 250V, 35A, DIRECTFET L8; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:250V; On Resistance Rds(on):0.032ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:125W; Transistor Case Style:DirectFET L8; No. of Pins:15Pins; Operating Temperature Max:175°C; Product Range:HEXFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET, CA-N, 250V, 35A, DIRECTFET L8; Polarità Transistor:Canale N; Corrente Continua di Drain Id:35A; Tensione Drain Source Vds:250V; Resistenza di Attivazione Rds(on):0.032ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:125W; Modello Case Transistor:DirectFET L8; No. di Pin:15Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:HEXFET Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

Market price

型號	製造商	描述	庫存	價格
IRF7799L2TRPBF DISTI # IRF7799L2TRPBFCT-ND	Infineon Technologies AG	MOSFET N-CH 250V DIRECTFET L8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1863In Stock	1000:$3.0312 500:$3.5942 100:$4.4386 10:$5.4130 1:$6.0600
IRF7799L2TRPBF DISTI # IRF7799L2TRPBFDKR-ND	Infineon Technologies AG	MOSFET N-CH 250V DIRECTFET L8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1863In Stock	1000:$3.0312 500:$3.5942 100:$4.4386 10:$5.4130 1:$6.0600
IRF7799L2TRPBF DISTI # IRF7799L2TRPBFTR-ND	Infineon Technologies AG	MOSFET N-CH 250V DIRECTFET L8 RoHS: Compliant Min Qty: 4000 Container: Tape & Reel (TR)	Limited Supply - Call
IRF7799L2TRPBF DISTI # 91Y4757	Infineon Technologies AG	MOSFET, N-CH, 250V, 35A, DIRECTFET L8,Transistor Polarity:N Channel,Continuous Drain Current Id:35A,Drain Source Voltage Vds:250V,On Resistance Rds(on):0.032ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes	7759	1:$5.0500 10:$4.2900 25:$4.2200 50:$3.9700 100:$3.7200 250:$3.5300 500:$3.1500 1000:$2.6600
IRF7799L2TRPBF DISTI # 70019648	Infineon Technologies AG	MOSFET,250V,200A,1.5 MOHM,200NC QG RoHS: Compliant	0	4000:$5.7300 8000:$5.6150 20000:$5.4440 40000:$5.2140 100000:$4.8710
IRF7799L2TRPBF DISTI # 942-IRF7799L2TRPBF	Infineon Technologies AG	MOSFET 250V N-CH HEXFET 38mOhms 110nC RoHS: Compliant	3075	1:$5.0500 10:$4.2900 25:$4.2200 100:$3.7200 250:$3.5300 500:$3.1500 1000:$2.6600 4000:$2.3200
IRF7799L2TRPBF DISTI # 2579996	Infineon Technologies AG	MOSFET, N-CH, 250V, 35A, DIRECTFET L8 RoHS: Compliant	7759	1:£4.4800 10:£3.3800 100:£2.9600 250:£2.8200 500:£2.5300
IRF7799L2TRPBF DISTI # 2579996	Infineon Technologies AG	MOSFET, N-CH, 250V, 35A, DIRECTFET L8 RoHS: Compliant	7759	1:$9.5900 10:$8.5700 100:$7.0300 500:$5.6900 1000:$4.8000

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	Mfr.#: IRF7799L2TRPBF OMO.#: OMO-IRF7799L2TRPBF-INFINEON-TECHNOLOGIES	MOSFET 250V N-CH HEXFET 38mOhms 110nC