PartNumber | FCP165N65S3 | FCP165N60E | FCP165N65S3R0 |
Description | MOSFET SUPERFET3 650V 19A 165 mOhm | MOSFET 600V 23A N-Chnl SuperFET Easy-Drive | MOSFET SUPERFET3 650V TO220 PKG |
Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 650 V | 600 V | 650 V |
Id Continuous Drain Current | 19 A | 23 A | 19 A |
Rds On Drain Source Resistance | 165 mOhms | 165 mOhms | 165 mOhms |
Vgs th Gate Source Threshold Voltage | 2.5 V | 2.5 V | 2.5 V |
Vgs Gate Source Voltage | 30 V | 20 V, 30 V | 30 V |
Qg Gate Charge | 39 nC | 57 nC | 39 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 154 W | 227 W | 154 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Tube | Tube | Tube |
Series | SuperFET3 | FCP165N60E | SuperFET3 |
Brand | ON Semiconductor | ON Semiconductor / Fairchild | ON Semiconductor |
Forward Transconductance Min | 12 S | 20 S | - |
Fall Time | 13 ns | 18 ns | 5 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 22 ns | 18 ns | 15 ns |
Factory Pack Quantity | 800 | 800 | 800 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 53 ns | 100 ns | 44 ns |
Typical Turn On Delay Time | 21 ns | 22 ns | 17 ns |
Tradename | - | SuperFET II | - |
Height | - | 16.3 mm | - |
Length | - | 10.67 mm | - |
Transistor Type | - | 1 N-Channel | 1 N-Channel SuperFET III MOSFET |
Width | - | 4.7 mm | - |
Unit Weight | - | 0.063493 oz | - |