FCP165N60E

FCP165N60E
Mfr. #:
FCP165N60E
製造商:
ON Semiconductor / Fairchild
描述:
MOSFET 600V 23A N-Chnl SuperFET Easy-Drive
生命週期:
製造商新產品
數據表:
FCP165N60E 數據表
交貨:
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支付:
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ECAD Model:
更多信息:
FCP165N60E 更多信息
產品屬性
屬性值
製造商:
安森美半導體
產品分類:
MOSFET
RoHS:
Y
技術:
安裝方式:
通孔
包裝/案例:
TO-220-3
通道數:
1 Channel
晶體管極性:
N通道
Vds - 漏源擊穿電壓:
600 V
Id - 連續漏極電流:
23 A
Rds On - 漏源電阻:
165 mOhms
Vgs th - 柵源閾值電壓:
2.5 V
Vgs - 柵源電壓:
20 V, 30 V
Qg - 門電荷:
57 nC
最低工作溫度:
- 55 C
最高工作溫度:
+ 150 C
Pd - 功耗:
227 W
配置:
單身的
頻道模式:
增強
商品名:
超級場效應晶體管 II
打包:
管子
高度:
16.3 mm
長度:
10.67 mm
系列:
FCP165N60E
晶體管類型:
1 N-Channel
寬度:
4.7 mm
品牌:
安森美半導體/飛兆半導體
正向跨導 - 最小值:
20 S
秋季時間:
18 ns
產品類別:
MOSFET
上升時間:
18 ns
出廠包裝數量:
800
子類別:
MOSFET
典型關斷延遲時間:
100 ns
典型的開啟延遲時間:
22 ns
單位重量:
0.063493 oz
Tags
FCP165, FCP16, FCP1, FCP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600V, 23A, 165mΩ, TO-220
***ark
SuperFET2 600V 165mohm slow version - TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB
***ical
Trans MOSFET N-CH 600V 23A 3-Pin(3+Tab) TO-220
***et
Trans MOSFET N-CH 600V 23A 3-Pin TO-220 Tube
***i-Key
MOSFET N-CH 600V TO220
***et Europe
SUPERFET2 600V 165MOHM SLOW VERSION
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 600V, 23A, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:23A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.132ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipation Pd:227W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:SuperFET II Series; Automotive Qualification Standard:-; MSL:-; SVHC:Lead (27-Jun-2018)
***nell
MOSFET, CAN-N, 600V, 23A, TO-220-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:23A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.132ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.5V; Dissipazione di Potenza Pd:227W; Modello Case Transistor:TO-220; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:SuperFET II Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):Lead (27-Jun-2018)
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.Consequently, SuperFET II MOSFET easy-drive series offers slightly slower rise and fall times compared to the SuperFET IIMOSFET series. Noted by the “E” part number suffix, this family helps manage EMI issues and allows for easier designimplementation. For faster switching in applications where switching losses must be at an absolute minimum, please consider the SuperFET II MOSFET series.
SuperFET® II Power MOSFETs
ON Semiconductor SuperFET® II Power MOSFETs are a new proprietary generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. These SuperFET® II MOSFETs are suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.Learn More
型號 製造商 描述 庫存 價格
FCP165N60E
DISTI # V99:2348_14141720
ON SemiconductorSUPERFET2 600V 165MOHM SLOW VE691
  • 800:$1.6660
  • 100:$2.0030
  • 25:$2.2630
  • 10:$2.2860
  • 1:$2.9832
FCP165N60E
DISTI # FCP165N60E-ND
ON SemiconductorMOSFET N-CH 600V 23A TO220
RoHS: Compliant
Min Qty: 1
Container: Tube
800In Stock
  • 800:$1.7984
  • 100:$2.1126
  • 25:$2.4376
  • 10:$2.5780
  • 1:$2.8700
FCP165N60E
DISTI # 25887488
ON SemiconductorSUPERFET2 600V 165MOHM SLOW VE691
  • 5:$2.9832
FCP165N60E
DISTI # FCP165N60E
ON SemiconductorSUPERFET2 600V 165MOHM SLOW VERSION (Alt: FCP165N60E)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 50:€1.2900
  • 100:€1.2900
  • 500:€1.2900
  • 1000:€1.2900
  • 25:€1.3900
  • 10:€1.4900
  • 1:€1.7900
FCP165N60E
DISTI # FCP165N60E
ON SemiconductorSUPERFET2 600V 165MOHM SLOW VERSION - Rail/Tube (Alt: FCP165N60E)
RoHS: Compliant
Min Qty: 800
Container: Tube
Americas - 0
  • 8000:$1.1900
  • 800:$1.2900
  • 1600:$1.2900
  • 3200:$1.2900
  • 4800:$1.2900
FCP165N60E
DISTI # 84Y5816
ON SemiconductorMOSFET, N-CH, 600V, 23A, TO-220-3,Transistor Polarity:N Channel,Continuous Drain Current Id:23A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.132ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes666
  • 500:$1.7300
  • 250:$1.9200
  • 100:$2.0300
  • 50:$2.1300
  • 25:$2.2400
  • 10:$2.3400
  • 1:$2.7600
FCP165N60E
DISTI # 512-FCP165N60E
ON SemiconductorMOSFET 600V 23A N-Chnl SuperFET Easy-Drive
RoHS: Compliant
95
  • 1:$2.7300
  • 10:$2.3200
  • 100:$2.0100
  • 250:$1.9000
  • 500:$1.7100
  • 1000:$1.4400
  • 2500:$1.3700
  • 5000:$1.3200
FCP165N60E
DISTI # 2565218
ON SemiconductorMOSFET, N-CH, 600V, 23A, TO-220-3
RoHS: Compliant
666
  • 800:$2.6100
  • 100:$3.5600
  • 10:$4.3400
  • 1:$4.8600
FCP165N60E
DISTI # 2565218
ON SemiconductorMOSFET, N-CH, 600V, 23A, TO-220-3696
  • 500:£1.1700
  • 250:£1.3100
  • 100:£1.3900
  • 10:£1.5900
  • 1:£2.1200
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TVS Diodes / ESD Suppressors 3kW 120V 5% Uni-Directional
FCP125N60E

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MOSFET 600V 29A N-Chnl SuperFET Easy-Drive
STP23N80K5

Mfr.#: STP23N80K5

OMO.#: OMO-STP23N80K5

MOSFET N-channel 800 V, 0.23 Ohm typ., 16 A MDmesh K5 Power MOSFET in a TO-220 package
STP28N60M2

Mfr.#: STP28N60M2

OMO.#: OMO-STP28N60M2

MOSFET N-CH 600V 0.135Ohm typ. 22A MDmesh M2
FCP25N60N-F102

Mfr.#: FCP25N60N-F102

OMO.#: OMO-FCP25N60N-F102

MOSFET 600V N-CHAN SupreMOS
FCP170N60

Mfr.#: FCP170N60

OMO.#: OMO-FCP170N60

MOSFET SF2 600V 170MOHM F TO220
82531400

Mfr.#: 82531400

OMO.#: OMO-82531400

Varistors WE-VS SMD 1206 180pF 200A 56VDC
UTS6JC14E5S

Mfr.#: UTS6JC14E5S

OMO.#: OMO-UTS6JC14E5S

Standard Circular Connector 5P Strt Socket Plug Backshell Size 14E
1-2199298-1

Mfr.#: 1-2199298-1

OMO.#: OMO-1-2199298-1

IC & Component Sockets 6P DIP SKT 300 CL LADDER
可用性
庫存:
95
訂購:
2078
輸入數量:
FCP165N60E的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
1
US$2.73
US$2.73
10
US$2.32
US$23.20
100
US$2.01
US$201.00
250
US$1.90
US$475.00
500
US$1.71
US$855.00
1000
US$1.44
US$1 440.00
2500
US$1.37
US$3 425.00
5000
US$1.32
US$6 600.00
由於2021年半導體供不應求,低於2021年之前的正常價格,請發詢價確認。
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