OMO ElectronicOMO Electronic
Expand menu
0 購物車

IXTY1R6N50D2-TRL vs IXTY1R6N50D2 vs IXTY1R6N50P

 
PartNumberIXTY1R6N50D2-TRLIXTY1R6N50D2IXTY1R6N50P
DescriptionDiscrete Semiconductor Modules Depletion Mode MOSFETMOSFET N-CH 500V 1.6A DPAKIGBT Transistors MOSFET 1.6 Amps 500 V 6 Ohm Rds
ManufacturerIXYS-IXYS
Product CategoryDiscrete Semiconductor Modules-Transistors - FETs, MOSFETs - Single
RoHSY--
ProductPower MOSFET Modules--
TypeDepletion Mode--
Vgs Gate Source Voltage20 V--
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseTO-252-3--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
PackagingReel-Tube
ConfigurationSingle-Single
BrandIXYS--
Transistor PolarityN-Channel-N-Channel
Fall Time41 ns-23 ns
Id Continuous Drain Current1.6 A--
Pd Power Dissipation100 W--
Product TypeDiscrete Semiconductor Modules--
Rds On Drain Source Resistance2.3 Ohms--
Rise Time70 ns-26 ns
Factory Pack Quantity2500--
SubcategoryDiscrete Semiconductor Modules--
Typical Turn Off Delay Time35 ns-45 ns
Typical Turn On Delay Time25 ns-20 ns
Vds Drain Source Breakdown Voltage500 V--
Vgs th Gate Source Threshold Voltage- 4.5 V--
Series--IXTY1R6N50
Unit Weight--0.012346 oz
Package Case--TO-252-3
Technology--Si
Number of Channels--1 Channel
Transistor Type--1 N-Channel
Pd Power Dissipation--43 W
Vgs Gate Source Voltage--30 V
Id Continuous Drain Current--1.6 A
Vds Drain Source Breakdown Voltage--500 V
Vgs th Gate Source Threshold Voltage--5.5 V
Rds On Drain Source Resistance--6.5 Ohms
Qg Gate Charge--3.9 nC
Forward Transconductance Min--0.7 S
Channel Mode--Enhancement
Top