NTTS2P03R2 vs NTTS2P03R2G vs NTTS2P03

 
PartNumberNTTS2P03R2NTTS2P03R2GNTTS2P03
DescriptionMOSFET -30V -2.48AMOSFET -30V -2.48A P-Channel
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSNY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseMicro-8Micro-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage30 V30 V-
Id Continuous Drain Current2.48 A2.48 A-
Rds On Drain Source Resistance85 mOhms85 mOhms-
Vgs Gate Source Voltage20 V20 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation780 mW780 mW-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Height0.95 mm0.95 mm-
Length3 mm3 mm-
ProductMOSFET Small SignalMOSFET Small Signal-
Transistor Type1 P-Channel1 P-Channel-
Width3 mm3 mm-
BrandON SemiconductorON Semiconductor-
Fall Time40 ns, 20 ns40 ns, 20 ns-
Product TypeMOSFETMOSFET-
Rise Time40 ns, 20 ns40 ns, 20 ns-
Factory Pack Quantity40004000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time30 ns, 40 ns30 ns, 40 ns-
Typical Turn On Delay Time16 ns, 10 ns16 ns, 10 ns-
Qg Gate Charge-3.2 nC-
Forward Transconductance Min-3.1 S-
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