QPD1000 vs QPD1003 vs QPD1000PCB4B01

 
PartNumberQPD1000QPD1003QPD1000PCB4B01
DescriptionRF JFET Transistors 50-1000MHz 15W 28V SSG 19dB GaNRF JFET Transistors 1.2-1.4GHz 500W 50V SSG 20dB GaNRF Development Tools QPD1000 50-1000MHz Eval Board
ManufacturerQorvoQorvo-
Product CategoryRF JFET TransistorsRF JFET Transistors-
RoHSYY-
Transistor TypeHEMTHEMT-
TechnologyGaN SiCGaN SiC-
Gain19 dB19.9 dB-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage28 V50 V-
Vgs Gate Source Breakdown Voltage100 V145 V-
Id Continuous Drain Current817 mA15 A-
Output Power24 W540 W-
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 85 C+ 85 C-
Pd Power Dissipation28.8 W370 W-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseQFN-8RF-565-
PackagingTrayTray-
ConfigurationSingleSingle-
Operating Frequency30 MHz to 1.215 GHz1.2 GHz to 1.4 GHz-
Operating Temperature Range- 40 C to + 85 C- 40 C to + 85 C-
SeriesQPDQPD-
BrandQorvoQorvo-
Development KitQPD1000PCB401, QPD1000PCB402QPD1003PCB401-
Moisture SensitiveYes--
Product TypeRF JFET TransistorsRF JFET Transistors-
Factory Pack Quantity10018-
SubcategoryTransistorsTransistors-
Vgs th Gate Source Threshold Voltage- 2.8 V- 2.8 V-
Part # Aliases11311401131389-
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