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| PartNumber | STB45N60DM2AG | STB45N65M5 | STB45N60DM2 |
| Description | MOSFET Automotive-grade N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET in a D2PAK package | MOSFET N-Ch 650V 0.067 Ohm 35A MDmesh M5 MOS | |
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | D2PAK-3 | TO-263-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 650 V | - |
| Id Continuous Drain Current | 34 A | 35 A | - |
| Rds On Drain Source Resistance | 93 mOhms | 78 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 3 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 56 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 250 W | 208 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | - | Enhancement |
| Qualification | AEC-Q101 | - | - |
| Tradename | MDmesh | MDmesh | - |
| Packaging | Reel | Reel | - |
| Height | 4.6 mm | - | - |
| Length | 10.4 mm | - | - |
| Product | Power MOSFET | - | - |
| Series | STB45N60DM2AG | STB45N65M5 | - |
| Transistor Type | 1 N-Channel Power MOSFET | 1 N-Channel | - |
| Type | High Voltage | - | - |
| Width | 9.35 mm | - | - |
| Brand | STMicroelectronics | STMicroelectronics | - |
| Fall Time | 6 ns | - | 6 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 27 ns | - | 27 ns |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 85 ns | - | 85 ns |
| Typical Turn On Delay Time | 29 ns | - | 29 ns |
| Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
| Package Case | - | - | TO-252-3 |
| Pd Power Dissipation | - | - | 250 W |
| Vgs Gate Source Voltage | - | - | +/- 25 V |
| Id Continuous Drain Current | - | - | 34 A |
| Vds Drain Source Breakdown Voltage | - | - | 650 V |
| Vgs th Gate Source Threshold Voltage | - | - | 4 V |
| Rds On Drain Source Resistance | - | - | 93 mOhms |
| Qg Gate Charge | - | - | 56 nC |