 | | | |
| PartNumber | APTGTQ200SK65T3G | APTGTQ200DA65T3G | APTGTQ200A65T3G |
| Description | IGBT Modules CC3200 | IGBT Modules CC3199 | IGBT Modules CC3201 |
| Manufacturer | Microchip | Microchip | Microchip |
| Product Category | IGBT Modules | IGBT Modules | IGBT Modules |
| Technology | - | - | - |
| Product | IGBT Silicon Modules | IGBT Silicon Modules | IGBT Silicon Modules |
| Configuration | Single | Single | Dual |
| Collector Emitter Voltage VCEO Max | 650 V | 650 V | 650 V |
| Collector Emitter Saturation Voltage | 1.65 V | 1.65 V | 1.65 V |
| Continuous Collector Current at 25 C | 200 A | 200 A | 200 A |
| Gate Emitter Leakage Current | 480 nA | 480 nA | 480 nA |
| Pd Power Dissipation | 483 W | 483 W | 483 W |
| Package / Case | SP3F | SP3F | SP3F |
| Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
| Maximum Operating Temperature | + 125 C | + 125 C | + 125 C |
| Packaging | Tube | Tube | Tube |
| Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
| Mounting Style | Chassis Mount | Chassis Mount | Chassis Mount |
| Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
| Product Type | IGBT Modules | IGBT Modules | IGBT Modules |
| Factory Pack Quantity | 1 | 1 | 1 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Unit Weight | 3.880136 oz | 3.880136 oz | 3.880136 oz |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Microchip / Microsemi |
APTGTQ200SK65T3G | IGBT Modules CC3200 | |
| APTGTQ200DA65T3G | IGBT Modules CC3199 | ||
| APTGTQ200A65T3G | IGBT Modules CC3201 |