BSC042N03L

BSC042N03LS G vs BSC042N03LS vs BSC042N03LSG

 
PartNumberBSC042N03LS GBSC042N03LSBSC042N03LSG
DescriptionMOSFET N-Ch 30V 93A TDSON-8 OptiMOS 3Power Field-Effect Transistor, 20A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
ManufacturerInfineonINFINEONINFINEON
Product CategoryMOSFETFETs - SingleFETs - Single
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTDSON-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current93 A--
Rds On Drain Source Resistance4.2 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2.5 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameOptiMOS--
PackagingReel--
Height1.27 mm--
Length5.9 mm--
SeriesOptiMOS 3--
Transistor Type1 N-Channel--
Width5.15 mm--
BrandInfineon Technologies--
Fall Time4 ns--
Product TypeMOSFET--
Rise Time4.4 ns--
Factory Pack Quantity5000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time24 ns--
Typical Turn On Delay Time6 ns--
Part # AliasesBSC042N03LSGATMA1 BSC42N3LSGXT SP000302864--
Unit Weight0.070548 oz--
製造商 型號 描述 RFQ
Infineon Technologies
Infineon Technologies
BSC042N03LS G MOSFET N-Ch 30V 93A TDSON-8 OptiMOS 3
BSC042N03LSGATMA1 MOSFET N-CH 30V 93A TDSON-8
BSC042N03LS 全新原裝
BSC042N03LSG Power Field-Effect Transistor, 20A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BSC042N03LSGATMA1 , TDA7 全新原裝
BSC042N03LS G IGBT Transistors MOSFET N-Ch 30V 93A TDSON-8 OptiMOS 3
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