 | |  | |
| PartNumber | BSS670S2LH6327XT | BSS670S2L H6327 | BSS670S2L |
| Description | MOSFET N-Ch 55V 540mA SOT-23-3 | MOSFET N-Ch 55V 540mA SOT-23-3 | MOSFET N-CH 55V 540MA SOT-23 |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-23-3 | SOT-23-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 55 V | 55 V | - |
| Id Continuous Drain Current | 540 mA | 540 mA | - |
| Rds On Drain Source Resistance | 650 mOhms | 345 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V | 1.2 V | - |
| Vgs Gate Source Voltage | 10 V | 20 V | - |
| Qg Gate Charge | 1.7 nC | 2.26 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 360 mW | 360 mW | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Packaging | Reel | Reel | - |
| Height | 1.1 mm | 1.1 mm | - |
| Length | 2.9 mm | 2.9 mm | - |
| Series | BSS670S2 | BSS670S2 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 1.3 mm | 1.3 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Forward Transconductance Min | 600 mS | 600 mS | - |
| Fall Time | 24 ns | 24 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 25 ns | 25 ns | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 21 ns | 21 ns | - |
| Typical Turn On Delay Time | 9 ns | 9 ns | - |
| Part # Aliases | BSS670S2LH6327XTSA1 SP000928950 | BSS670S2LH6327XTSA1 BSS67S2LH6327XT SP000928950 | - |
| Unit Weight | 0.000282 oz | 0.000282 oz | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Semelab / TT Electronics |
BSS76 | Bipolar Transistors - BJT TT Electronics | |
Infineon Technologies |
BSS670S2LH6327XT | MOSFET N-Ch 55V 540mA SOT-23-3 | |
| BSS670S2L H6327 | MOSFET N-Ch 55V 540mA SOT-23-3 | ||
| BSS670S2LH6327XTSA1 | MOSFET N-Ch 55V 540mA SOT-23-3 | ||
| BSS670S2LH6433XTMA1 | MOSFET SMALL SIGNAL+P-CH | ||
| BSS670S2L | MOSFET N-CH 55V 540MA SOT-23 | ||
| BSS670S2LH6327XTSA1 | MOSFET N-CH 55V 540MA SOT23 | ||
| BSS670S2LL6327HTSA1 | MOSFET N-CH 55V 540MA SOT-23 | ||
| BSS7728N | MOSFET N-CH 60V 200MA SOT-23 | ||
| BSS670S2LH6433XTMA1 | MOSFET N-CH 55V 540MA SOT23 | ||
| BSS66RTA | 全新原裝 | ||
| BSS66TA | Bipolar Transistors - BJT | ||
| BSS67 | 全新原裝 | ||
| BSS670S2L L6327 | 全新原裝 | ||
| BSS670S2L E6327 | 全新原裝 | ||
| BSS670S2L H6327 | Trans MOSFET N-CH 55V 0.54A Automotive 3-Pin SOT-23 T/R | ||
| BSS670S2L6327 | 全新原裝 | ||
| BSS670S2LE6327 | 全新原裝 | ||
| BSS670S2LH6327 | 55V,540MA,N-channel Power MOSFET | ||
| BSS670S2LH6327 , MAX6383 | 全新原裝 | ||
| BSS670S2LH6327. | 全新原裝 | ||
| BSS670S2LH6327/SN | 全新原裝 | ||
| BSS670S2LH6327XT | MOSFET N-Ch 55V 540mA SOT-23-3 | ||
| BSS670S2LL.6327 | 全新原裝 | ||
| BSS670S2LL6327 | Small Signal Field-Effect Transistor, 0.54A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSS67R | 全新原裝 | ||
| BSS67RTA | 全新原裝 | ||
| BSS67TA | 全新原裝 | ||
| BSS68 | 全新原裝 | ||
| BSS69 | 全新原裝 | ||
| BSS69R | 全新原裝 | ||
| BSS69TA | 全新原裝 | ||
| BSS70 | 全新原裝 | ||
| BSS70R | 全新原裝 | ||
| BSS70TA | 全新原裝 | ||
| BSS70TAPBFTA | 全新原裝 | ||
| BSS70TC | 全新原裝 | ||
| BSS71 | 全新原裝 | ||
| BSS71DCSM | 全新原裝 | ||
| BSS71S | 全新原裝 | ||
| BSS72 | 全新原裝 | ||
| BSS73 | 全新原裝 | ||
| BSS74 | 全新原裝 | ||
| BSS74-7-F | 全新原裝 | ||
| BSS74S | 全新原裝 | ||
| BSS75S | 全新原裝 | ||
| BSS75V120 | 全新原裝 | ||
| BSS7700SU | 全新原裝 | ||
| BSS7728 | 全新原裝 | ||
| BSS670S2LH6327XTSA1-CUT TAPE | 全新原裝 |