CGH40045F stock, CGH40045F, CGH40045F


PartNumber	CGH40045F	CGH40045F-TB
Description	RF JFET Transistors GaN HEMT DC-4.0GHz, 45 Watt	RF Development Tools Test Board without GaN HEMT
Manufacturer	Cree, Inc.	Cree, Inc.
Product Category	RF JFET Transistors	RF Development Tools
RoHS	Y	N
Transistor Type	HEMT	-
Technology	GaN	-
Gain	14 dB	-
Transistor Polarity	N-Channel	-
Vds Drain Source Breakdown Voltage	120 V	-
Vgs Gate Source Breakdown Voltage	- 10 V to 2 V	-
Id Continuous Drain Current	6 A	-
Output Power	55 W	-
Maximum Drain Gate Voltage	-	-
Minimum Operating Temperature	- 40 C	- 40 C
Maximum Operating Temperature	+ 150 C	+ 150 C
Pd Power Dissipation	-	-
Mounting Style	Screw Mount	-
Package / Case	440193	-
Packaging	Tube	Bulk
Application	-	-
Configuration	Single	-
Height	4.19 mm	-
Length	20.45 mm	-
Operating Frequency	2 GHz to 4 GHz	-
Operating Temperature Range	-	-
Product	GaN HEMT	Demonstration Boards
Width	5.97 mm	-
Brand	Wolfspeed / Cree	Wolfspeed / Cree
Forward Transconductance Min	-	-
Gate Source Cutoff Voltage	-	-
Class	-	-
Development Kit	CGH40045F-TB	-
Fall Time	-	-
NF Noise Figure	-	-
P1dB Compression Point	-	-
Product Type	RF JFET Transistors	RF Development Tools
Rds On Drain Source Resistance	-	-
Rise Time	-	-
Factory Pack Quantity	120	2
Subcategory	Transistors	Development Tools
Typical Turn Off Delay Time	-	-
Vgs th Gate Source Threshold Voltage	- 3 V	-
Type	-	RF Transistors
Tool Is For Evaluation Of	-	CGH40045F
Frequency	-	4 GHz
Operating Supply Voltage	-	28 V
Description/Function	-	Demonstration board for CGH40045F
Dimensions	-	-
Interface Type	-	-
For Use With	-	CGH40045F

Search Part Number : "CGH40045F", Match & Start with "CGH40045F" - Total : 6

製造商	型號	描述
N/A	CGH40045F	RF JFET Transistors GaN HEMT DC-4.0GHz, 45 Watt
	CGH40045F-TB	RF Development Tools Test Board without GaN HEMT
	CGH40045F-TB	BOARD DEMO AMP CIRCUIT CGH40045
	CGH40045F	RF JFET Transistors DC-4GHz 28V 45W Gain 14dB GaN HEMT
	CGH40045F/P	全新原裝
	CGH40045FE	全新原裝

CGH40045F