CGH40045F

CGH40045F
Mfr. #:
CGH40045F
製造商:
N/A
描述:
RF JFET Transistors GaN HEMT DC-4.0GHz, 45 Watt
生命週期:
製造商新產品
數據表:
CGH40045F 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
CGH40045F 更多信息
產品屬性
屬性值
製造商:
克里公司
產品分類:
射頻 JFET 晶體管
RoHS:
Y
晶體管類型:
HEMT
技術:
氮化鎵
獲得:
14 dB
晶體管極性:
N通道
Vds - 漏源擊穿電壓:
120 V
Vgs - 柵源擊穿電壓:
- 10 V to 2 V
Id - 連續漏極電流:
6 A
輸出功率:
55 W
最大漏柵電壓:
-
最低工作溫度:
- 40 C
最高工作溫度:
+ 150 C
Pd - 功耗:
-
安裝方式:
螺絲安裝
包裝/案例:
440193
打包:
管子
應用:
-
配置:
單身的
高度:
4.19 mm
長度:
20.45 mm
工作頻率:
2 GHz to 4 GHz
工作溫度範圍:
-
產品:
氮化鎵 HEMT
寬度:
5.97 mm
品牌:
Wolfspeed / 克里
正向跨導 - 最小值:
-
柵源截止電壓:
-
班級:
-
開發套件:
CGH40045F-TB
秋季時間:
-
NF - 噪聲係數:
-
P1dB - 壓縮點:
-
產品類別:
射頻 JFET 晶體管
Rds On - 漏源電阻:
-
上升時間:
-
出廠包裝數量:
120
子類別:
晶體管
典型關斷延遲時間:
-
Vgs th - 柵源閾值電壓:
- 3 V
Tags
CGH40045F, CGH4004, CGH400, CGH40, CGH4, CGH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***nsix Microsemi
RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET
***ical
Trans RF MOSFET N-CH 120V 6A 3-Pin Case 440193
***o-Tech
CGH40045F - 45W, RF Power GaN HEMT (Flange Package)
***fspeed SCT
Aerospace & Defense, 28 V, 4 GHz, 45W, Flange, RoHS
***i-Key
TRANS 45W RF GAN HEMT 440193 PKG
GaN HEMTs
Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.
型號 製造商 描述 庫存 價格
CGH40045F
DISTI # V36:1790_22404196
Cree, Inc.Trans FET N-CH 84V GaN HEMT 3-Pin Case 4401930
    CGH40045F
    DISTI # CGH40045F-ND
    WolfspeedRF MOSFET HEMT 28V 440193
    RoHS: Compliant
    Min Qty: 1
    Container: Tray
    659In Stock
    • 1:$148.6800
    CGH40045F-TB
    DISTI # CGH40045F-TB-ND
    WolfspeedBOARD DEMO AMP CIRCUIT CGH40045
    RoHS: Not compliant
    Min Qty: 1
    Container: Bulk
    1In Stock
    • 1:$550.0000
    CGH40045F
    DISTI # 941-CGH40045F
    Cree, Inc.RF JFET Transistors GaN HEMT DC-4.0GHz, 45 Watt
    RoHS: Compliant
    119
    • 1:$166.8200
    CGH40045F-TB
    DISTI # 941-CGH40045F-TB
    Cree, Inc.RF Development Tools Test Board without GaN HEMT
    RoHS: Not compliant
    2
    • 1:$632.5000
    CGH40045FCree, Inc. 20
      CGH40045F
      DISTI # CGH40045F
      WolfspeedRF POWER TRANSISTOR
      RoHS: Compliant
      107
      • 1:$182.3800
      CGH40045F-TB
      DISTI # CGH40045F-TB
      WolfspeedRF TRANSISTOR TEST FIXTURE
      RoHS: Compliant
      2
      • 1:$632.5000
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      可用性
      庫存:
      119
      訂購:
      2102
      輸入數量:
      CGH40045F的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
      參考價格(美元)
      數量
      單價
      小計金額
      1
      US$166.82
      US$166.82
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