FCP165

FCP165N65S3 vs FCP165N60E vs FCP165N65S3R0

 
PartNumberFCP165N65S3FCP165N60EFCP165N65S3R0
DescriptionMOSFET SUPERFET3 650V 19A 165 mOhmMOSFET 600V 23A N-Chnl SuperFET Easy-DriveMOSFET SUPERFET3 650V TO220 PKG
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-220-3TO-220-3TO-220-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage650 V600 V650 V
Id Continuous Drain Current19 A23 A19 A
Rds On Drain Source Resistance165 mOhms165 mOhms165 mOhms
Vgs th Gate Source Threshold Voltage2.5 V2.5 V2.5 V
Vgs Gate Source Voltage30 V20 V, 30 V30 V
Qg Gate Charge39 nC57 nC39 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation154 W227 W154 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingTubeTubeTube
SeriesSuperFET3FCP165N60ESuperFET3
BrandON SemiconductorON Semiconductor / FairchildON Semiconductor
Forward Transconductance Min12 S20 S-
Fall Time13 ns18 ns5 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time22 ns18 ns15 ns
Factory Pack Quantity800800800
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time53 ns100 ns44 ns
Typical Turn On Delay Time21 ns22 ns17 ns
Tradename-SuperFET II-
Height-16.3 mm-
Length-10.67 mm-
Transistor Type-1 N-Channel1 N-Channel SuperFET III MOSFET
Width-4.7 mm-
Unit Weight-0.063493 oz-
製造商 型號 描述 RFQ
FCP165N65S3 MOSFET SUPERFET3 650V 19A 165 mOhm
FCP165N65S3R0 MOSFET SUPERFET3 650V TO220 PKG
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FCP165N60E MOSFET 600V 23A N-Chnl SuperFET Easy-Drive
ON Semiconductor
ON Semiconductor
FCP165N60E MOSFET N-CH 600V 23A TO220
FCP165N65S3 SF3 650V 165MOHM E TO220
FCP165N65S3R0 N-Channel SuperFET Easy-drive MOSFET
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