FDC5614P

FDC5614P vs FDC5614P , 1N4756ATA vs FDC5614P D1KD

 
PartNumberFDC5614PFDC5614P , 1N4756ATAFDC5614P D1KD
DescriptionMOSFET SSOT-6 P-CH
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSSOT-6--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current3 A--
Rds On Drain Source Resistance105 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.6 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenamePowerTrench--
PackagingReel--
Height1.1 mm--
Length2.9 mm--
ProductMOSFET Small Signal--
SeriesFDC5614P--
Transistor Type1 P-Channel--
TypeMOSFET--
Width1.6 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min8 S--
Fall Time10 ns--
Product TypeMOSFET--
Rise Time10 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time19 ns--
Typical Turn On Delay Time7 ns--
Part # AliasesFDC5614P_NL--
Unit Weight0.001058 oz--
製造商 型號 描述 RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FDC5614P MOSFET SSOT-6 P-CH
ON Semiconductor
ON Semiconductor
FDC5614P MOSFET P-CH 60V 3A SSOT-6
FDC5614P_D87Z MOSFET P-CH 60V 3A 6SSOT
FDC5614P , 1N4756ATA 全新原裝
FDC5614P D1KD 全新原裝
FDC5614P-1 全新原裝
FDC5614P-NL 全新原裝
FDC5614P/ 全新原裝
FDC5614P-CUT TAPE 全新原裝
FDC5614P-- 全新原裝
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