 |  | | |
| PartNumber | FDC6401N | FDC6401 | FDC6401N-CUT TAPE |
| Description | MOSFET Dual N-Ch 2.5V Spec Power Trench | ||
| Manufacturer | ON Semiconductor | ON | - |
| Product Category | MOSFET | FETs - Arrays | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SSOT-6 | - | - |
| Number of Channels | 2 Channel | 2 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 3 A | - | - |
| Rds On Drain Source Resistance | 70 mOhms | - | - |
| Vgs Gate Source Voltage | 12 V | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 960 mW | - | - |
| Configuration | Dual | Dual | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | PowerTrench | - | - |
| Packaging | Reel | Digi-ReelR Alternate Packaging | - |
| Height | 1.1 mm | - | - |
| Length | 2.9 mm | - | - |
| Product | MOSFET Small Signal | - | - |
| Series | FDC6401N | PowerTrenchR | - |
| Transistor Type | 2 N-Channel | 2 N-Channel | - |
| Type | MOSFET | - | - |
| Width | 1.6 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Forward Transconductance Min | 10 S | - | - |
| Fall Time | 7 ns | 7 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 7 ns | 7 ns | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 13 ns | 13 ns | - |
| Typical Turn On Delay Time | 5 ns | 5 ns | - |
| Part # Aliases | FDC6401N_NL | - | - |
| Unit Weight | 0.001270 oz | 0.001270 oz | - |
| Part Aliases | - | FDC6401N_NL | - |
| Package Case | - | SOT-23-6 Thin, TSOT-23-6 | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | SuperSOT-6 | - |
| FET Type | - | 2 N-Channel (Dual) | - |
| Power Max | - | 700mW | - |
| Drain to Source Voltage Vdss | - | 20V | - |
| Input Capacitance Ciss Vds | - | 324pF @ 10V | - |
| FET Feature | - | Logic Level Gate | - |
| Current Continuous Drain Id 25°C | - | 3A | - |
| Rds On Max Id Vgs | - | 70 mOhm @ 3A, 4.5V | - |
| Vgs th Max Id | - | 1.5V @ 250μA | - |
| Gate Charge Qg Vgs | - | 4.6nC @ 4.5V | - |
| Pd Power Dissipation | - | 960 mW | - |
| Vgs Gate Source Voltage | - | 12 V | - |
| Id Continuous Drain Current | - | 3 A | - |
| Vds Drain Source Breakdown Voltage | - | 20 V | - |
| Rds On Drain Source Resistance | - | 70 mOhms | - |
| Forward Transconductance Min | - | 10 S | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FDC6401N | MOSFET Dual N-Ch 2.5V Spec Power Trench | |
| FDC6401 | 全新原裝 | ||
| FDC6401N-NL | 全新原裝 | ||
| FDC6401N-CUT TAPE | 全新原裝 | ||
ON Semiconductor |
FDC6401N | MOSFET 2N-CH 20V 3A SSOT-6 |