FDMS3660

FDMS3660S vs FDMS3660AS vs FDMS3660S-F121

 
PartNumberFDMS3660SFDMS3660ASFDMS3660S-F121
DescriptionMOSFET PowerStage Dual N-Ch PowerTrench MOSFETMOSFET COMPUTING MOSFETMOSFET 2N-CH 30V 13A/30A 8-PQFN
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePower-56-8Power-56-8-
Number of Channels2 Channel2 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V30 V-
Id Continuous Drain Current13 A, 30 A13 A-
Rds On Drain Source Resistance8 mOhms, 1.8 mOhms11 mOhms-
Vgs Gate Source Voltage20 V, 12 V12 V, 20 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation2.2 W, 2.5 W2.2 W, 2.5 W-
ConfigurationDualDual-
TradenamePower Stage PowerTrenchPower Stage PowerTrench-
PackagingReelReel-
Height1.1 mm1.1 mm-
Length6 mm6 mm-
SeriesFDMS3660SFDMS3660AS-
Transistor Type2 N-Channel2 N-Channel-
Width5 mm5 mm-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Product TypeMOSFETMOSFET-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Unit Weight0.006032 oz0.006032 oz-
Vgs th Gate Source Threshold Voltage-1.5 V, 2 V-
Qg Gate Charge-21 nC, 64 nC-
Forward Transconductance Min-173 S, 240 S-
Fall Time-3 ns, 5 ns-
Rise Time-3 ns, 5 ns-
Typical Turn Off Delay Time-21 ns, 38 ns-
Typical Turn On Delay Time-9 ns, 12 ns-
製造商 型號 描述 RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FDMS3660S MOSFET PowerStage Dual N-Ch PowerTrench MOSFET
FDMS3660AS MOSFET COMPUTING MOSFET
ON Semiconductor
ON Semiconductor
FDMS3660AS MOSFET 2N-CH 30V 13A/30A 8QFN
FDMS3660S MOSFET 2N-CH 30V 13A/30A 8-PQFN
FDMS3660S-F121 MOSFET 2N-CH 30V 13A/30A 8-PQFN
FDMS3660S 22CF 全新原裝
FDMS3660S-1 全新原裝
FDMS3660S_F121 MOSFET PowerTrench PowerStage Asymmetric Dual N-Channel MOSFET
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