FDMS3660 stock, FDMS3660, FDMS3660S


PartNumber	FDMS3660S	FDMS3660AS	FDMS3660S-F121
Description	MOSFET PowerStage Dual N-Ch PowerTrench MOSFET	MOSFET COMPUTING MOSFET	MOSFET 2N-CH 30V 13A/30A 8-PQFN
Manufacturer	ON Semiconductor	ON Semiconductor	-
Product Category	MOSFET	MOSFET	-
RoHS	Y	Y	-
Technology	Si	Si	-
Mounting Style	SMD/SMT	SMD/SMT	-
Package / Case	Power-56-8	Power-56-8	-
Number of Channels	2 Channel	2 Channel	-
Transistor Polarity	N-Channel	N-Channel	-
Vds Drain Source Breakdown Voltage	30 V	30 V	-
Id Continuous Drain Current	13 A, 30 A	13 A	-
Rds On Drain Source Resistance	8 mOhms, 1.8 mOhms	11 mOhms	-
Vgs Gate Source Voltage	20 V, 12 V	12 V, 20 V	-
Minimum Operating Temperature	- 55 C	- 55 C	-
Maximum Operating Temperature	+ 150 C	+ 150 C	-
Pd Power Dissipation	2.2 W, 2.5 W	2.2 W, 2.5 W	-
Configuration	Dual	Dual	-
Tradename	Power Stage PowerTrench	Power Stage PowerTrench	-
Packaging	Reel	Reel	-
Height	1.1 mm	1.1 mm	-
Length	6 mm	6 mm	-
Series	FDMS3660S	FDMS3660AS	-
Transistor Type	2 N-Channel	2 N-Channel	-
Width	5 mm	5 mm	-
Brand	ON Semiconductor / Fairchild	ON Semiconductor / Fairchild	-
Product Type	MOSFET	MOSFET	-
Factory Pack Quantity	3000	3000	-
Subcategory	MOSFETs	MOSFETs	-
Unit Weight	0.006032 oz	0.006032 oz	-
Vgs th Gate Source Threshold Voltage	-	1.5 V, 2 V	-
Qg Gate Charge	-	21 nC, 64 nC	-
Forward Transconductance Min	-	173 S, 240 S	-
Fall Time	-	3 ns, 5 ns	-
Rise Time	-	3 ns, 5 ns	-
Typical Turn Off Delay Time	-	21 ns, 38 ns	-
Typical Turn On Delay Time	-	9 ns, 12 ns	-

Search Part Number : "FDMS3660", Match & Start with "FDMS3660" - Total : 8

製造商	型號	描述
ON Semiconductor / Fairchild	FDMS3660S	MOSFET PowerStage Dual N-Ch PowerTrench MOSFET
ON Semiconductor / Fairchild	FDMS3660AS	MOSFET COMPUTING MOSFET
ON Semiconductor	FDMS3660AS	MOSFET 2N-CH 30V 13A/30A 8QFN
	FDMS3660S	MOSFET 2N-CH 30V 13A/30A 8-PQFN
	FDMS3660S-F121	MOSFET 2N-CH 30V 13A/30A 8-PQFN
	FDMS3660S 22CF	全新原裝
	FDMS3660S-1	全新原裝
	FDMS3660S_F121	MOSFET PowerTrench PowerStage Asymmetric Dual N-Channel MOSFET

FDMS3660