FDMS4

FDMS4D0N12C vs FDMS4435BZ vs FDMS4D4N08C

 
PartNumberFDMS4D0N12CFDMS4435BZFDMS4D4N08C
DescriptionMOSFET PTNG 120V N-FET 118AMOSFET P-Channel PowerTrench MOSFETMOSFET PTNG 80/20V Nch Power Trench MOSFET
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CasePQFN-8Power-56-8Power-56-8
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelP-ChannelN-Channel
Vds Drain Source Breakdown Voltage120 V30 V80 V
Id Continuous Drain Current114 A9 A123 A
Rds On Drain Source Resistance4 mOhms20 mOhms3.7 mOhms
Vgs th Gate Source Threshold Voltage2 V-2 V
Vgs Gate Source Voltage20 V-20 V
Qg Gate Charge82 nC-56 nC
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation106 W39 W125 W
ConfigurationSingleSingleSingle
Channel ModeEnhancement-Enhancement
PackagingReelReelReel
BrandON SemiconductorON Semiconductor / FairchildON Semiconductor / Fairchild
Forward Transconductance Min144 S25 S98 S
Fall Time12 ns-5 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time8 ns-7 ns
Factory Pack Quantity300030003000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time45 ns-25 ns
Typical Turn On Delay Time25 ns-17 ns
Tradename-PowerTrench-
Height-1.1 mm-
Length-6 mm-
Series-FDMS4435BZFDMS4D4N08C
Transistor Type-1 P-Channel1 N-Channel
Width-5 mm-
Unit Weight-0.002610 oz0.002402 oz
製造商 型號 描述 RFQ
FDMS4D0N12C MOSFET PTNG 120V N-FET 118A
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FDMS4435BZ MOSFET P-Channel PowerTrench MOSFET
FDMS4D4N08C MOSFET PTNG 80/20V Nch Power Trench MOSFET
ON Semiconductor
ON Semiconductor
FDMS4435BZ MOSFET P-CH 30V 9A POWER56
FDMS4D0N12C PTNG 120V N-FET PQFN56
FDMS4D4N08C MOSFET N-CH 80V 123A 8PQFN
Top