FF600R06

FF600R06ME3 vs FF600R06ME3BOSA1 vs FF600R06ME4

 
PartNumberFF600R06ME3FF600R06ME3BOSA1FF600R06ME4
DescriptionIGBT Modules IGBT 600V 600AIGBT MODULE VCES 600V 600A
ManufacturerInfineon--
Product CategoryIGBT Modules--
ProductIGBT Silicon Modules--
ConfigurationDual--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage1.9 V--
Continuous Collector Current at 25 C700 A--
Gate Emitter Leakage Current400 nA--
Pd Power Dissipation1650 W--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 150 C--
PackagingTray--
BrandInfineon Technologies--
Mounting StyleChassis Mount--
Maximum Gate Emitter Voltage20 V--
Product TypeIGBT Modules--
Factory Pack Quantity10--
SubcategoryIGBTs--
Part # AliasesFF600R06ME3BOSA1 SP000374489--
製造商 型號 描述 RFQ
Infineon Technologies
Infineon Technologies
FF600R06ME3 IGBT Modules IGBT 600V 600A
FF600R06ME3BOSA1 IGBT MODULE VCES 600V 600A
FF600R06ME3 Trans IGBT Module N-CH 600V 700A 11-pin ECONOD-3 (Alt: FF600R06ME3)
FF600R06ME4 全新原裝
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