FGH30T

FGH30T65UPDT-F155 vs FGH30T65UPDT_F155 vs FGH30T65UPDT

 
PartNumberFGH30T65UPDT-F155FGH30T65UPDT_F155FGH30T65UPDT
DescriptionIGBT Transistors FS1TIGBT TO247 30A 650VIGBT Transistors 650V FIELD STOP TRENCH IGBT
ManufacturerON SemiconductorFairchild Semiconductor-
Product CategoryIGBT TransistorsIGBTs - Single-
RoHSY--
TechnologySi--
Package / CaseTO-247-3--
Mounting StyleThrough HoleThrough Hole-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max650 V--
Collector Emitter Saturation Voltage2.1 V2.1 V-
Maximum Gate Emitter Voltage20 V20 V-
Continuous Collector Current at 25 C60 A60 A-
Pd Power Dissipation250 W--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
SeriesFGH30T65UPDT--
PackagingTubeTube-
Continuous Collector Current Ic Max30 A30 A-
BrandON Semiconductor / Fairchild--
Gate Emitter Leakage Current400 nA400 nA-
Product TypeIGBT Transistors--
Factory Pack Quantity450--
SubcategoryIGBTs--
Part # AliasesFGH30T65UPDT_F155--
Unit Weight0.225401 oz0.225401 oz-
Package Case-TO-247-3-
Input Type-Standard-
Mounting Type-Through Hole-
Supplier Device Package-TO-247-
Power Max-250W-
Reverse Recovery Time trr-43ns-
Current Collector Ic Max-60A-
Voltage Collector Emitter Breakdown Max-650V-
IGBT Type-Trench Field Stop-
Current Collector Pulsed Icm-90A-
Vce on Max Vge Ic-2.3V @ 15V, 30A-
Switching Energy-760μJ (on), 400μJ (off)-
Gate Charge-155nC-
Td on off 25°C-22ns/139ns-
Test Condition-400V, 30A, 8 Ohm, 15V-
Pd Power Dissipation-250 W-
Collector Emitter Voltage VCEO Max-650 V-
製造商 型號 描述 RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FGH30T65UPDT-F155 IGBT Transistors FS1TIGBT TO247 30A 650V
FGH30T65UPDT_F155 IGBT Transistors 650V FIELD STOP TRENCH IGBT
FGH30T65UPDT 全新原裝
ON Semiconductor
ON Semiconductor
FGH30T65UPDT-F155 IGBT 650V 60A 250W TO247-3
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