FGH50

FGH50T65SQD-F155 vs FGH50N3 vs FGH50N6S2D

 
PartNumberFGH50T65SQD-F155FGH50N3FGH50N6S2D
DescriptionIGBT Transistors 650V FS4 Trench IGBTIGBT Transistors 300V PT N-ChannelIGBT Transistors Comp 600V N-Ch
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryIGBT TransistorsIGBT TransistorsIGBT Transistors
RoHSYEE
TechnologySiSiSi
Package / CaseTO-247-3TO-247-3TO-247-3
Mounting StyleThrough HoleThrough HoleThrough Hole
ConfigurationSingleSingleSingle
Collector Emitter Voltage VCEO Max650 V300 V600 V
Collector Emitter Saturation Voltage1.6 V1.3 V1.9 V
Maximum Gate Emitter Voltage20 V20 V20 V
Continuous Collector Current at 25 C100 A75 A75 A
Pd Power Dissipation268 W463 W463 W
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 150 C+ 150 C
SeriesFGH50T65SQDFGH50N3FGH50N6S2D
PackagingTubeTubeTube
Continuous Collector Current Ic Max100 A75 A75 A
BrandON Semiconductor / FairchildON Semiconductor / FairchildON Semiconductor / Fairchild
Gate Emitter Leakage Current+/- 400 nA+/- 250 nA+/- 250 nA
Product TypeIGBT TransistorsIGBT TransistorsIGBT Transistors
Factory Pack Quantity450450450
SubcategoryIGBTsIGBTsIGBTs
Part # AliasesFGH50T65SQD_F155FGH50N3_NLFGH50N6S2D_NL
Unit Weight0.225401 oz0.225401 oz0.225401 oz
Height-20.82 mm20.82 mm
Length-15.87 mm15.87 mm
Width-4.82 mm4.82 mm
Continuous Collector Current-75 A75 A
製造商 型號 描述 RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FGH50T65SQD-F155 IGBT Transistors 650V FS4 Trench IGBT
FGH50N3 IGBT Transistors 300V PT N-Channel
FGH50T65UPD IGBT Transistors 650 V 100 A 240 W
FGH50N6S2D IGBT Transistors Comp 600V N-Ch
ON Semiconductor
ON Semiconductor
FGH50N3 IGBT 300V 75A 463W TO247
FGH50T65UPD IGBT Transistors 650 V 100 A 240 W
FGH50T65SQD-F155 650V FS4 TRENCH IGBT
FGH50N6S2 IGBT 600V 75A 463W TO247
FGH50N6S2D IGBT 600V 75A 463W TO247
FGH50N3-NL 全新原裝
FGH50N3PWD 全新原裝
FGH50N60S2D 全新原裝
FGH50N6S2 ABU 全新原裝
FGH50N6S2/D 全新原裝
FGH50N6S2D AG 全新原裝
FGH50N6S2D,50N6S2D 全新原裝
FGH50T65 全新原裝
FGH50T65SQD 全新原裝
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