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FGH50N6S2D

FGH50N6S2D
Mfr. #:
FGH50N6S2D
製造商:
ON Semiconductor / Fairchild
描述:
IGBT Transistors Comp 600V N-Ch
生命週期:
製造商新產品
數據表:
FGH50N6S2D 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
產品屬性
屬性值
製造商：
安森美半導體
產品分類：
IGBT晶體管
RoHS：
E
技術：
矽
包裝/案例：
TO-247-3
安裝方式：
通孔
配置：
單身的
集電極-發射極電壓 VCEO 最大值：
600 V
集電極-發射極飽和電壓：
1.9 V
最大柵極發射極電壓：
20 V
25 C 時的連續集電極電流：
75 A
Pd - 功耗：
463 W
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
系列：
FGH50N6S2D
打包：
管子
連續集電極電流 Ic 最大值：
75 A
高度：
20.82 mm
長度：
15.87 mm
寬度：
4.82 mm
品牌：
安森美半導體/飛兆半導體
連續集電極電流：
75 A
柵極-發射極漏電流：
+/- 250 nA
產品類別：
IGBT晶體管
出廠包裝數量：
450
子類別：
IGBT
第 # 部分別名：
FGH50N6S2D_NL
單位重量：
0.225401 oz
Tags
FGH50N6S2D, FGH50N6S, FGH50N6, FGH50N, FGH50, FGH5, FGH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
FGH50N6S2D Series 600 V 75 A SMT 600V SMPS II Series N-Channel IGBT - TO-247
***ment14 APAC
IGBT, N, TO-247; Transistor Type:IGBT; DC Collector Current:75A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:463W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Alternate Case Style:SOT-249; Current Ic Continuous a Max:75A; Current Temperature:25°C; Fall Time Typ:50ns; Fall Time tf:50ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:463W; Power Dissipation Pd:463W; Power Dissipation Pd:463W; Pulsed Current Icm:240A; Rise Time:15ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***th Star Micro
The FGH50N6S2D is a Low Gate Charge, Low Plateau Voltage SMPS II IGBT combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and reduce the power requirement of the gate drive. These devices are ideally suited for high voltage switched mode power supply applications where low conduction loss, fast switching times and UIS capability are essential. SMPS II LGC devices have been specially designed for: Power Factor Correction (PFC) circuits Full bridge topologies Half bridge topologies Push-Pull circuits Uninterruptible power supplies Zero voltage and zero current switching circuits IGBT formerly Developmental Type TA49344 Diode formerly Developmental Type TA49392 Product Highlights: 100kHz Operation at 390V, 40A 200kHZ Operation at 390V, 25A 600V Switching SOA Capability Typical Fall Time. . . . . . 90ns at TJ = 125C Low Gate Charge. . . . . . 70nC at VGE = 15V Low Plateau Voltage. . . . . . 6.5V Typical UIS Rated. . . . . . 480mJ Low Conduction Loss
*** Source Electronics
Trans IGBT Chip N-CH 600V 70A 463000mW 3-Pin(3+Tab) TO-247 Tube / IGBT 600V 75A 463W TO247
***ource
600V SMPS Series N Channel IGBT with Anti Parallel Hyperfast Diode600V SMPS NIGBT
***ment14 APAC
IGBT, TO-247; Transistor Type:IGBT; DC Collector Current:75A; Collector Emitter Voltage Vces:2.6V; Power Dissipation Pd:463W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Alternate Case Style:SOT-249; Current Ic Continuous a Max:75A; Current Temperature:25°C; Device Marking:HGTG30N60A4D; Fall Time Typ:38ns; Fall Time tf:38ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Pin Configuration:With flywheel diode; Power Dissipation Max:463W; Power Dissipation Pd:463W; Power Dissipation Pd:463W; Pulsed Current Icm:240A; Rise Time:12s; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***rchild Semiconductor
The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49343. The diode used in anti-parallel is the development type TA49373. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49345.
***eco
Transistor IGBT Chip Negative Channel 600 Volt 75A 3-Pin(3+Tab) TO-247 Rail
***rchild Semiconductor
The HGTG30N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS and welder.
***ment14 APAC
IGBT, N, TO-247; Transistor Type:IGBT; DC Collector Current:75A; Collector Emitter Voltage Vces:2.6V; Power Dissipation Pd:463W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Alternate Case Style:SOT-249; Current Ic Continuous a Max:75A; Current Temperature:25°C; Device Marking:HGTG30N60A4; Fall Time tf:38ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Pin Format:GCE; Power Dissipation Max:463W; Power Dissipation Pd:463W; Power Dissipation Pd:463W; Power Dissipation Ptot Max:463W; Pulsed Current Icm:240A; Rise Time:12ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***ical
Trans IGBT Chip N=-CH 600V 80A 349000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
FGH40N60SMDF Series 600 V 80 A 92 ns Flange Mount Field Stop IGBT - TO-247
***el Electronic
FAIRCHILD SEMICONDUCTOR FGH40N60SMDF IGBT Single Transistor, General Purpose, 80 A, 600 V, 349 W, 600 V, TO-247AB, 3 Pins
***nell
IGBT,N CH,FAST,W/DIO,600V,80A,TO247; Transistor Type:IGBT; DC Collector Current:80A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:349W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-247AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:349W
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.
***p One Stop Global
Trans IGBT Chip N-CH 600V 70A 250000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
STGW45HF Series 600 V 45 A Ultra Fast IGBT Flange Mount - TO-247
***icroelectronics
45 A, 600 V ultrafast IGBT with ultrafast diode
***nell
IGBT, SINGLE, 600V, 70A, TO-247; DC Collector Current: 70A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 250W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: HF Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (07-Jul-2017)
***ical
Trans IGBT Chip N-CH 600V 60A 200000mW 3-Pin(3+Tab) TO-247 Tube
***eco
Transistor IGBT Chip N-Channel 600 Volt 60A 3-Pin(3+Tab) TO-247
***ark
IGBT, TO-247; Continuous Collector Current:60A; Collector Emitter Saturation Voltage:2.5V; Power Dissipation:200W; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; MSL:- RoHS Compliant: Yes
***p One Stop Global
Trans IGBT Chip N-CH 600V 80A 250000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
STGW Series Ultra Fast Free Wheeling Diode Through Hole IGBT - TO-247-3
***ark
IGBT, TO-247; Continuous Collector Current:80A; Collector Emitter Saturation Voltage:2.5V; Power Dissipation:250W; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; MSL:- RoHS Compliant: Yes
型號 製造商 描述 庫存 價格
FGH50N6S2D
DISTI # FGH50N6S2D-ND		ON SemiconductorIGBT 600V 75A 463W TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		314In Stock
  • 900:$8.1854
  • 450:$8.7499
  • 25:$10.4436
  • 10:$10.8950
  • 1:$11.8500
FGH50N6S2D
DISTI # FGH50N6S2D		ON SemiconductorTrans IGBT Chip N-CH 600V 75A 3-Pin(3+Tab) TO-247 Rail (Alt: FGH50N6S2D)
RoHS: Compliant
Min Qty: 1		Europe - 300
  • 1000:€5.4900
  • 500:€5.8900
  • 100:€6.0900
  • 50:€6.2900
  • 25:€6.5900
  • 10:€6.8900
  • 1:€7.4900
FGH50N6S2D
DISTI # FGH50N6S2D		ON SemiconductorTrans IGBT Chip N-CH 600V 75A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: FGH50N6S2D)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 4500:$5.9447
  • 2700:$6.0953
  • 1800:$6.1734
  • 900:$6.2536
  • 450:$6.2944
FGH50N6S2D
DISTI # FGH50N6S2D		ON SemiconductorTrans IGBT Chip N-CH 600V 75A 3-Pin(3+Tab) TO-247 Rail - Bulk (Alt: FGH50N6S2D)
RoHS: Compliant
Min Qty: 33
Container: Bulk		Americas - 0
  • 330:$9.5900
  • 165:$9.7900
  • 99:$9.8900
  • 33:$10.0900
  • 66:$10.0900
FGH50N6S2D
DISTI # 58K1491		ON SemiconductorTrans IGBT Chip N-CH 600V 75A 3-Pin(3+Tab) TO-247 Rail - Bulk (Alt: 58K1491)
RoHS: Compliant
Min Qty: 1
Container: Bulk		Americas - 0
    FGH50N6S2D
    DISTI # 91K9842    		ON SemiconductorIGBT Single Transistor, 75 A, 2.7 V, 463 W, 600 V, TO-247, 3 RoHS Compliant: Yes721
    • 500:$6.9500
    • 250:$7.1900
    • 100:$8.1700
    • 50:$8.6800
    • 25:$9.6100
    • 10:$9.9000
    • 1:$10.5900
    FGH50N6S2D.
    DISTI # 27AC5740    		Fairchild Semiconductor CorporationPTPIGBT TO247 600V SMPS2 ROHS COMPLIANT: YES0
    • 4500:$5.9500
    • 2700:$6.1000
    • 1800:$6.1800
    • 900:$6.2600
    • 1:$6.3000
    FGH50N6S2D
    DISTI # 512-FGH50N6S2D    		ON SemiconductorIGBT Transistors Comp 600V N-Ch
    RoHS: Compliant    		0
      FGH50N6S2DFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247
      RoHS: Compliant      		3424
      • 1000:$10.2500
      • 500:$10.7900
      • 100:$11.2300
      • 25:$11.7100
      • 1:$12.6200
      FGH50N6S2D
      DISTI # 1095034      		ON SemiconductorIGBT, N, TO-247
      RoHS: Compliant      		715
      • 900:$12.5000
      • 450:$13.3600
      • 10:$16.6300
      • 1:$18.0900
      FGH50N6S2D
      DISTI # XSKDRABV0037683      		ON SEMICONDUCTOR 
      RoHS: Compliant      		360 in Stock0 on Order
      • 360:$8.7300
      • 53:$9.3500
      FGH50N6S2D
      DISTI # 1095034      		ON SemiconductorIGBT, N, TO-247711
      • 100:£7.3000
      • 50:£8.0300
      • 10:£8.7500
      • 5:£9.5200
      • 1:£10.0600
      圖片 型號 描述
      MGJ2D051509SC

      Mfr.#: MGJ2D051509SC

      OMO.#: OMO-MGJ2D051509SC-MURATA-POWER-SOLUTIONS

      		 Isolated DC/DC Converters 2W 5Vin 15/-8.7Vout 80/40mA SIP
      可用性
      庫存:
      Available
      訂購:
      5000
      輸入數量:
      FGH50N6S2D的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
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