PartNumber | FGH50T65SQD-F155 | FGH50T65UPD |
Description | IGBT Transistors 650V FS4 Trench IGBT | IGBT Transistors 650 V 100 A 240 W |
Manufacturer | ON Semiconductor | ON Semiconductor |
Product Category | IGBT Transistors | IGBT Transistors |
RoHS | Y | Y |
Technology | Si | Si |
Package / Case | TO-247-3 | TO-247 |
Mounting Style | Through Hole | Through Hole |
Configuration | Single | - |
Collector Emitter Voltage VCEO Max | 650 V | 650 V |
Collector Emitter Saturation Voltage | 1.6 V | 2.1 V |
Maximum Gate Emitter Voltage | 20 V | 25 V |
Continuous Collector Current at 25 C | 100 A | 100 A |
Pd Power Dissipation | 268 W | 240 W |
Minimum Operating Temperature | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 175 C |
Series | FGH50T65SQD | FGH50T65UPD |
Packaging | Tube | Tube |
Continuous Collector Current Ic Max | 100 A | - |
Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
Gate Emitter Leakage Current | +/- 400 nA | 400 nA |
Product Type | IGBT Transistors | IGBT Transistors |
Factory Pack Quantity | 450 | 450 |
Subcategory | IGBTs | IGBTs |
Part # Aliases | FGH50T65SQD_F155 | - |
Unit Weight | 0.225401 oz | 0.225401 oz |