 | |  | |
| PartNumber | FQI3N80TU | FQI3N25TU | FQI3N30TU |
| Description | MOSFET 800V N-Channel QFET | MOSFET | MOSFET 300V N-Channel QFET |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | E | Y | E |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | SMD/SMT |
| Package / Case | TO-262-3 | TO-262-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 800 V | 250 V | 300 V |
| Id Continuous Drain Current | 3 A | 2.8 A | 3.2 A |
| Rds On Drain Source Resistance | 5 Ohms | 2.2 Ohms | 1.65 Ohms |
| Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 3.13 W | 3.13 W | 3.13 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Tube | Tube | Tube |
| Height | 7.88 mm | 7.88 mm | 4.83 mm |
| Length | 10.29 mm | 10.29 mm | 10.67 mm |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Type | MOSFET | MOSFET | MOSFET |
| Width | 4.83 mm | 4.83 mm | 9.65 mm |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Fall Time | 30 ns | 20 ns | 25 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 40 ns | 25 ns | 40 ns |
| Factory Pack Quantity | 50 | 1000 | 50 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 30 ns | 5.5 ns | 10 ns |
| Typical Turn On Delay Time | 15 ns | 6.6 ns | 10 ns |
| Unit Weight | 0.084199 oz | 0.084199 oz | 0.084199 oz |
| Forward Transconductance Min | - | - | 1.75 S |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FQI4N80TU | MOSFET 800V N-Channel QFET | |
| FQI47P06TU | MOSFET 60V P-Channel QFET | ||
| FQI3N80TU | MOSFET 800V N-Channel QFET | ||
| FQI4N25TU | MOSFET | ||
| FQI3N25TU | MOSFET | ||
| FQI3N30TU | MOSFET 300V N-Channel QFET | ||
| FQI4N20TU | MOSFET | ||
| FQI3P20TU | MOSFET | ||
| FQI34P10 | 全新原裝 | ||
| FQI3652 | 全新原裝 | ||
| FQI3N25 | 全新原裝 | ||
| FQI3N25TUFSC | 全新原裝 | ||
| FQI3N30 | 全新原裝 | ||
| FQI3N30TUFSC | 全新原裝 | ||
| FQI3N40TUFSC | 全新原裝 | ||
| FQI3N60 | 全新原裝 | ||
| FQI3N80 | 全新原裝 | ||
| FQI3N90 | 全新原裝 | ||
| FQI3P20 | 全新原裝 | ||
| FQI3P20TUFSC | 全新原裝 | ||
| FQI3P50 | 全新原裝 | ||
| FQI40N10 | 全新原裝 | ||
| FQI44N10 | 全新原裝 | ||
| FQI44N10TU | MOSFET | ||
| FQI45N03L | 全新原裝 | ||
| FQI46N15 | 全新原裝 | ||
| FQI47P06 | 全新原裝 | ||
| FQI4N20L | 全新原裝 | ||
| FQI4N20TM | 全新原裝 | ||
| FQI4N20TUFSC | 全新原裝 | ||
| FQI4N25 | 全新原裝 | ||
| FQI4N25TUFSC | 全新原裝 | ||
| FQI4N80 | 全新原裝 | ||
| FQI4N80C | 全新原裝 | ||
| FQI4N80TUFSC | 全新原裝 | ||
| FQI4N90 | 全新原裝 | ||
ON Semiconductor |
FQI34P10TU | MOSFET P-CH 100V 33.5A I2PAK | |
| FQI3N25TU | MOSFET N-CH 250V 2.8A I2PAK | ||
| FQI3N30TU | MOSFET N-CH 300V 3.2A I2PAK | ||
| FQI3N40TU | MOSFET N-CH 400V 2.5A I2PAK | ||
| FQI3N80TU | MOSFET N-CH 800V 3A I2PAK | ||
| FQI3N90TU | MOSFET N-CH 900V 3.6A I2PAK | ||
| FQI3P20TU | MOSFET P-CH 200V 2.8A I2PAK | ||
| FQI3P50TU | MOSFET P-CH 500V 2.7A I2PAK | ||
| FQI47P06TU | MOSFET P-CH 60V 47A I2PAK | ||
| FQI4N20LTU | MOSFET N-CH 200V 3.8A I2PAK | ||
| FQI4N20TU | MOSFET N-CH 200V 3.6A I2PAK | ||
| FQI4N25TU | MOSFET N-CH 250V 3.6A I2PAK | ||
| FQI4N80TU | Darlington Transistors MOSFET 800V N-Channel QFET | ||
| FQI4N20 | Power Field-Effect Transistor, 3.6A I(D), 200V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA |