![]() | |||
| PartNumber | GA20SICP12-263 | GA20SICP12 | GA20SICP12-247 |
| Description | MOSFET 1200V 45A SIC CoPak | ||
| Manufacturer | GeneSiC Semiconductor | GeneSiC Semiconductor | - |
| Product Category | MOSFET | Power Drivers - Modules | - |
| RoHS | Y | - | - |
| Technology | SiC | SiC | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-263-7 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 1.2 kV | - | - |
| Id Continuous Drain Current | 45 A | - | - |
| Rds On Drain Source Resistance | 50 mOhms | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Qg Gate Charge | 100 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 282 W | - | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Tube | Tube | - |
| Height | 4.597 mm | - | - |
| Length | 10.668 mm | - | - |
| Series | GA20SICP12 | GA20SICP12 | - |
| Type | Transistor/Schottky Diode Co-Pack | - | - |
| Width | 9.169 mm | - | - |
| Brand | GeneSiC Semiconductor | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 50 | - | - |
| Subcategory | MOSFETs | - | - |
| Unit Weight | 0.056438 oz | 0.056438 oz | - |
| Package Case | - | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | - |
| Current | - | 20A | - |
| Voltage | - | 1200V | - |
| Voltage Isolation | - | - | - |
| Pd Power Dissipation | - | 282 W | - |
| Vgs Gate Source Voltage | - | 30 V | - |
| Id Continuous Drain Current | - | 45 A | - |
| Vds Drain Source Breakdown Voltage | - | 1.2 kV | - |
| Rds On Drain Source Resistance | - | 50 mOhms | - |
| Qg Gate Charge | - | 100 nC | - |