 | | | |
| PartNumber | IPB019N06 | IPB019N06L | IPB019N06L3 |
| Description | |||
| Manufacturer | - | - | Infineon Technologies |
| Product Category | - | - | Transistors - FETs, MOSFETs - Single |
| Series | - | - | OptiMOS 3 |
| Packaging | - | - | Reel |
| Part Aliases | - | - | IPB019N06L3GATMA1 IPB019N06L3GXT SP000453020 |
| Unit Weight | - | - | 0.068654 oz |
| Tradename | - | - | OptiMOS |
| Package Case | - | - | TO-263-3 |
| Technology | - | - | Si |
| Number of Channels | - | - | 1 Channel |
| Configuration | - | - | Single |
| Transistor Type | - | - | 1 N-Channel |
| Pd Power Dissipation | - | - | 250 W |
| Maximum Operating Temperature | - | - | + 175 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 38 ns |
| Rise Time | - | - | 79 ns |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 120 A |
| Vds Drain Source Breakdown Voltage | - | - | 60 V |
| Rds On Drain Source Resistance | - | - | 1.9 mOhms |
| Transistor Polarity | - | - | N-Channel |
| Typical Turn Off Delay Time | - | - | 131 ns |
| Typical Turn On Delay Time | - | - | 35 ns |
| Channel Mode | - | - | Enhancement |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB019N06L3 G | MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS 3 | |
| IPB019N06L3GATMA1 | MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS 3 | ||
| IPB019N06L3GATMA1 | MOSFET N-CH 60V 120A TO263-3 | ||
| IPB019N06 | 全新原裝 | ||
| IPB019N06L | 全新原裝 | ||
| IPB019N06L3 | 全新原裝 | ||
| IPB019N06L3 G | Trans MOSFET N-CH 60V 120A 3-Pin(2+Tab) TO-263 | ||
| IPB019N06L3G | 全新原裝 |