IPI11

IPI110N20N3 G vs IPI111N15N3 G vs IPI110N20N3GAKSA1

 
PartNumberIPI110N20N3 GIPI111N15N3 GIPI110N20N3GAKSA1
DescriptionMOSFET N-Ch 200V 88A I2PAK-3 OptiMOS 3MOSFET N-Ch 150V 83A I2PAK-3 OptiMOS 3MOSFET N-CH 200V 88A TO262-3
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-262-3TO-262-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage200 V150 V-
Id Continuous Drain Current88 A--
Rds On Drain Source Resistance10.7 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge65 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation300 W--
ConfigurationSingleSingle-
TradenameOptiMOSOptiMOS-
PackagingTubeTube-
Height9.45 mm9.45 mm-
Length10.2 mm10.2 mm-
SeriesOptiMOS 3--
Transistor Type1 N-Channel1 N-Channel-
Width4.5 mm4.5 mm-
BrandInfineon TechnologiesInfineon Technologies-
Fall Time11 ns--
Product TypeMOSFETMOSFET-
Rise Time26 nS--
Factory Pack Quantity500500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time41 nS--
Part # AliasesIPI110N20N3GAKSA1 IPI11N2N3GXK SP000714304IPI111N15N3GAKSA1 SP000680232-
Unit Weight0.084199 oz0.070548 oz-
製造商 型號 描述 RFQ
Infineon Technologies
Infineon Technologies
IPI111N15N3GAKSA1 MOSFET N-Ch 150V 83A I2PAK-3
IPI110N20N3 G MOSFET N-Ch 200V 88A I2PAK-3 OptiMOS 3
IPI111N15N3 G MOSFET N-Ch 150V 83A I2PAK-3 OptiMOS 3
IPI11N60C3AAKSA2 MOSFET N-CH I2PAK
IPI110N20N3GAKSA1 MOSFET N-CH 200V 88A TO262-3
IPI11N03LA MOSFET N-CH 25V 30A I2PAK
IPI111N15N3GAKSA1 RF Bipolar Transistors MOSFET N-Ch 150V 83A I2PAK-3
Infineon Technologies
Infineon Technologies
IPI11N03LA MOSFET N-Ch 25V 30A I2PAK-3
IPI111N15N3 G MOSFET N-Ch 150V 83A I2PAK-3 OptiMOS 3
IPI110N20N3G 全新原裝
IPI110N20N3G , 2SD2436-S 全新原裝
IPI111N15N3G 全新原裝
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