| PartNumber | IPI60R190C6 | IPI60R199CP | IPI60R190C6XKSA1 |
| Description | MOSFET N-Ch 650V 20.2A I2PAK-3 CoolMOS C6 | MOSFET N-Ch 650V 16A I2PAK-3 CoolMOS CP | MOSFET HIGH POWER_LEGACY |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-262-3 | TO-262-3 | TO-262-3 |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 650 V | 650 V | - |
| Id Continuous Drain Current | 20.2 A | 16 A | - |
| Rds On Drain Source Resistance | 190 mOhms | 199 mOhms | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 63 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 151 W | 139 W | - |
| Configuration | Single | Single | - |
| Tradename | CoolMOS | CoolMOS | CoolMOS |
| Packaging | Tube | Tube | Tube |
| Height | 9.45 mm | 9.45 mm | 9.45 mm |
| Length | 10.2 mm | 10.2 mm | 10.2 mm |
| Series | CoolMOS C6 | CoolMOS CE | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 4.5 mm | 4.5 mm | 4.5 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Fall Time | 9 nS | 5 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 11 ns | 5 ns | - |
| Factory Pack Quantity | 500 | 500 | - |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 110 nS | 50 ns | - |
| Part # Aliases | IPI60R190C6XKSA1 IPI6R19C6XK SP000660618 | IPI60R199CPXKSA1 IPI6R199CPXK SP000103248 | IPI60R190C6 IPI6R19C6XK SP000660618 |
| Unit Weight | 0.084199 oz | 0.084199 oz | 0.084199 oz |
| Channel Mode | - | Enhancement | - |
| Typical Turn On Delay Time | - | 10 ns | - |