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| PartNumber | IRF640NSTRLPBF | IRF640NSTRRPBF | IRF640NSPBF |
| Description | MOSFET MOSFT 200V 18A 150mOhm 44.7nC | MOSFET 200V 1 N-CH HEXFET 150mOhms 44.7nC | Darlington Transistors MOSFET 200V 24A 0.15 Ohm 25nC Qg 18A ID |
| Manufacturer | Infineon | Infineon | IR |
| Product Category | MOSFET | MOSFET | FETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263AB-3 | D2PAK-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 200 V | 200 V | - |
| Id Continuous Drain Current | 18 A | 18 A | - |
| Rds On Drain Source Resistance | 150 mOhms | 150 mOhms | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 44.7 nC | 44.7 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 150 W | 150 W | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | Reel | Tube |
| Height | 2.3 mm | 2.3 mm | - |
| Length | 6.5 mm | 6.5 mm | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 6.22 mm | 6.22 mm | - |
| Brand | Infineon Technologies | Infineon / IR | - |
| Forward Transconductance Min | 6.8 S | 6.8 S | - |
| Fall Time | 5.5 ns | 5.5 ns | 5.5 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 19 ns | 19 ns | 19 ns |
| Factory Pack Quantity | 800 | 800 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 23 ns | 23 ns | 23 ns |
| Typical Turn On Delay Time | 10 ns | 10 ns | 10 ns |
| Part # Aliases | SP001561810 | SP001561802 | - |
| Unit Weight | 0.070548 oz | 0.139332 oz | 0.139332 oz |
| Vgs th Gate Source Threshold Voltage | - | 4 V | - |
| Type | - | HEXFET Power MOSFET | - |
| Package Case | - | - | TO-252-3 |
| Pd Power Dissipation | - | - | 150 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 18 A |
| Vds Drain Source Breakdown Voltage | - | - | 200 V |
| Rds On Drain Source Resistance | - | - | 150 mOhms |
| Qg Gate Charge | - | - | 44.7 nC |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IRF640NSTRLPBF | MOSFET MOSFT 200V 18A 150mOhm 44.7nC | |
| IRF640NSTRLPBF | MOSFET N-CH 200V 18A D2PAK | ||
| IRF640NSPBF | Darlington Transistors MOSFET 200V 24A 0.15 Ohm 25nC Qg 18A ID | ||
| IRF640NSTRRPBF | Darlington Transistors MOSFET 200V 1 N-CH HEXFET 150mOhms 44.7nC | ||
Infineon / IR |
IRF640NSTRRPBF | MOSFET 200V 1 N-CH HEXFET 150mOhms 44.7nC | |
| IRF640NSTRLPBF-CUT TAPE | 全新原裝 | ||
| IRF640NSTRRPBF-CUT TAPE | 全新原裝 | ||
| IRF640NS | MOSFET N-CHANNEL 200V 18A D2PAK, EA | ||
| IRF640NSTR + | 全新原裝 | ||
| IRF640NSTRL | HEXFET N-CH MOSFET 18A 200V D2PAK, PK | ||
| IRF640NSTRLPBF STB19NF | 全新原裝 | ||
| IRF640NSTRLPBF,IRF640NS, | 全新原裝 | ||
| IRF640NSTRLPBF,IRF640NST | 全新原裝 | ||
| IRF640NSTRLPBF,IRF640STR | 全新原裝 | ||
| IRF640NSTRPBF | 全新原裝 | ||
| IRF640NSTRR | 18 A, 200 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET |