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IRF830P

IRF830PBF vs IRF830P vs IRF830PBF 2SK3305

 
PartNumberIRF830PBFIRF830PIRF830PBF 2SK3305
DescriptionMOSFET N-CH 500V HEXFET MOSFET
ManufacturerVishayVISHAY-
Product CategoryMOSFETFETs - Single-
RoHSE--
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220AB-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage500 V--
Id Continuous Drain Current4.5 A--
Rds On Drain Source Resistance1.5 Ohms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge38 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation74 W--
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingTubeTube-
SeriesIRF--
Transistor Type1 N-Channel1 N-Channel-
BrandVishay / Siliconix--
Forward Transconductance Min2.5 S--
Fall Time16 ns16 ns-
Product TypeMOSFET--
Rise Time16 ns16 ns-
Factory Pack Quantity50--
SubcategoryMOSFETs--
Typical Turn Off Delay Time42 ns42 ns-
Typical Turn On Delay Time8.2 ns8.2 ns-
Part # AliasesSIHF830-E3--
Unit Weight0.211644 oz0.211644 oz-
Part Aliases-SIHF840-E3-
Package Case-TO-220-3-
Pd Power Dissipation-74 W-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-4.5 A-
Vds Drain Source Breakdown Voltage-500 V-
Rds On Drain Source Resistance-1.5 Ohms-
Qg Gate Charge-38 nC-
製造商 型號 描述 RFQ
Vishay / Siliconix
Vishay / Siliconix 		IRF830PBF MOSFET N-CH 500V HEXFET MOSFET
IRF830P 全新原裝
IRF830PBF 2SK3305 全新原裝
IRF830PBF,IRF730, 全新原裝
IRF830PBF,IRF830 全新原裝
IRF830PBF,IRF830A,IRF830 全新原裝
IRF830PBR 全新原裝
Vishay
Vishay 		IRF830PBF MOSFET N-CH 500V 4.5A TO-220AB
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