| PartNumber | IXTP01N100D | IXTP02N120P | IXTP02N50D |
| Description | MOSFET 0.1 Amps 1000V 110 Rds | MOSFET 500V to 1200V Polar Power MOSFET | MOSFET 0.2 Amps 500V 30 Rds |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220AB-3 | TO-220-3 | TO-220-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 1 kV | 1.2 kV | 500 V |
| Id Continuous Drain Current | 400 mA | 200 mA | 200 mA |
| Rds On Drain Source Resistance | 80 Ohms | 60 Ohms | 30 Ohms |
| Vgs th Gate Source Threshold Voltage | 2 V | 4 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 5.8 nC | 4.7 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 25 W | 33 W | 25 W |
| Configuration | Single | Single | Single |
| Channel Mode | Depletion | Enhancement | Depletion |
| Packaging | Tube | Tube | Tube |
| Height | 9.15 mm | - | 9.15 mm |
| Length | 10.66 mm | - | 10.66 mm |
| Series | IXTP01N100 | IXTP02N120 | IXTP02N50 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 4.83 mm | - | 4.83 mm |
| Brand | IXYS | IXYS | IXYS |
| Forward Transconductance Min | 100 mS | 0.12 S | - |
| Fall Time | 64 ns | 39 ns | 45 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 10 ns | 10 ns | 4 ns |
| Factory Pack Quantity | 50 | 50 | 50 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 34 ns | 21 ns | 28 ns |
| Typical Turn On Delay Time | 7 ns | 6 ns | 9 ns |
| Unit Weight | 0.081130 oz | 0.012346 oz | 0.194007 oz |