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IXTP05N100P

IXTP05N100P
Mfr. #:
IXTP05N100P
製造商:
Littelfuse
描述:
MOSFET Polar Pwr MOSFET 1KV w/reduced Rds(on)
生命週期:
製造商新產品
數據表:
IXTP05N100P 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXTP05N100P DatasheetIXTP05N100P Datasheet (P4-P6)
ECAD Model:
產品屬性
屬性值
製造商：
IXYS
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
通孔
包裝/案例：
TO-220-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
1 kV
Id - 連續漏極電流：
500 mA
Rds On - 漏源電阻：
30 Ohms
Vgs th - 柵源閾值電壓：
4 V
Vgs - 柵源電壓：
20 V
Qg - 門電荷：
8.1 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
50 W
配置：
單身的
頻道模式：
增強
打包：
管子
產品：
MOSFET
系列：
IXTP05N100
晶體管類型：
1 N-Channel
品牌：
IXYS
秋季時間：
15 ns
產品類別：
MOSFET
上升時間：
15 ns
出廠包裝數量：
50
子類別：
MOSFET
典型關斷延遲時間：
20 ns
典型的開啟延遲時間：
6 ns
單位重量：
0.012346 oz
Tags
IXTP05, IXTP0, IXTP, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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MOSFET, N CH, 1000V, 6.5A, TO220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 6.5A; Drain Source Voltage Vds: 1kV; On Resistance Rds(on): 1.6ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V;
***S.I.T. Europe - USA - Asia
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***roFlash
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***ure Electronics
N-Channel 1000 V 3.7 Ohm SuperMESH3 Power MosFet TO-220FP
***nell
MOSFET, N CH, 1KV, 3.5A, TO220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.75A; Drain Source Voltage Vds: 1kV; On Resistance Rds(on): 2.7ohm; Rds(on) Test Voltage Vgs: 30V; Threshold Voltage Vgs: 3.75V; P
***r Electronics
Power Field-Effect Transistor, 3.5A I(D), 1000V, 3.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ical
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N-channel 1000V - 5.4Ohm - 2.5A - TO-220 - TO-220FP
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Power Field-Effect Transistor, 2.5A I(D), 1000V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
MOSFET, N CH, 1KV, 2.5A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:1kV; Continuous Drain Current Id:2.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; MSL:- RoHS Compliant: Yes
***emi
Power MOSFET, N-Channel, QFET®, 800 V, 3.0 A, 4.8 Ω, TO-220F
***hard Electronics
In a Pack of 5, N-Channel MOSFET, 3 A, 800 V, 3-Pin TO-220F ON Semiconductor FQPF3N80C
***Yang
Trans MOSFET N-CH 800V 3A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube
***enic
800V 3A 39W 4.8´Î@10V1.5A 5V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS
***r Electronics
Power Field-Effect Transistor, 3A I(D), 800V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:800V; On Resistance Rds(on):4.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:39W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:3A; No. of Transistors:1; Package / Case:TO-220F; Power Dissipation Pd:39W; Power Dissipation Pd:39W; Pulse Current Idm:12A; Termination Type:Through Hole; Voltage Vds Typ:800V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***emi
Power MOSFET, N-Channel, QFET®, 900 V, 4 A, 4.2 Ω, TO-220F
***ure Electronics
Single N-Channel 900 V 4.2 Ohm 22 nC 47 W DMOS Flange Mount Mosfet - TO-220F
***enic
900V 4A 47W 4.2´Î@10V2A 5V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS
*** Stop Electro
Power Field-Effect Transistor, 4A I(D), 900V, 4.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N-CH, 900V, 4A, TO-220F-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 4A; Drain Source Voltage Vds: 900V; On Resistance Rds(on): 3.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***emi
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***ow.cn
Trans MOSFET N-CH 800V 6.6A 3-Pin(3+Tab) TO-220FP Tube
***nell
MOSFET, N-CH, 800V, 6.6A, TO-220F-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 6.6A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 1.57ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V;
***r Electronics
Power Field-Effect Transistor, 6.6A I(D), 800V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
型號 製造商 描述 庫存 價格
IXTP05N100P
DISTI # IXTP05N100P-ND		IXYS CorporationMOSFET N-CH 1000V 500MA TO-263
RoHS: Compliant
Min Qty: 50
Container: Tube		Temporarily Out of Stock
  • 50:$1.8700
IXTP05N100P
DISTI # 747-IXTP05N100P		IXYS CorporationMOSFET Polar Pwr MOSFET 1KV w/reduced Rds(on)
RoHS: Compliant		0
  • 1:$2.4200
  • 10:$2.1900
  • 25:$1.9100
  • 50:$1.7900
  • 100:$1.7600
  • 250:$1.4300
  • 500:$1.3700
  • 1000:$1.1300
  • 2500:$0.9520
圖片 型號 描述
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Mfr.#: IXTP01N100D

OMO.#: OMO-IXTP01N100D

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Mfr.#: IXTP02N120P

OMO.#: OMO-IXTP02N120P

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IXTP05N100

Mfr.#: IXTP05N100

OMO.#: OMO-IXTP05N100

 MOSFET 0.75 Amps 1000V 15 Rds
IXTP08N120P

Mfr.#: IXTP08N120P

OMO.#: OMO-IXTP08N120P

 MOSFET 0.8 Amps 1200V 25 Rds
IXTP08N120P

Mfr.#: IXTP08N120P

OMO.#: OMO-IXTP08N120P-IXYS-CORPORATION

 MOSFET N-CH 1200V 800MA TO-220
IXTP05N100M

Mfr.#: IXTP05N100M

OMO.#: OMO-IXTP05N100M-IXYS-CORPORATION

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Mfr.#: IXTP05N100

OMO.#: OMO-IXTP05N100-IXYS-CORPORATION

 IGBT Transistors MOSFET 0.75 Amps 1000V 15 Rds
IXTP02N120P

Mfr.#: IXTP02N120P

OMO.#: OMO-IXTP02N120P-IXYS-CORPORATION

 IGBT Transistors MOSFET 500V to 1200V Polar Power MOSFET
IXTP08N100P

Mfr.#: IXTP08N100P

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可用性
庫存:
Available
訂購:
4000
輸入數量:
IXTP05N100P的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$2.42
US$2.42
10
US$2.19
US$21.90
25
US$1.91
US$47.75
50
US$1.79
US$89.50
100
US$1.76
US$176.00
250
US$1.43
US$357.50
500
US$1.37
US$685.00
1000
US$1.13
US$1 130.00
2500
US$0.95
US$2 380.00
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