IXTT1N

IXTT1N250HV-TRL vs IXTT1N300P3HV vs IXTT1N100

 
PartNumberIXTT1N250HV-TRLIXTT1N300P3HVIXTT1N100
DescriptionDiscrete Semiconductor Modules High Voltage Power MOSFETMOSFET DISC MOSFET N-CH STD-POLAR3MOSFET 1 Amps 1000V
ManufacturerIXYSIXYSIXYS
Product CategoryDiscrete Semiconductor ModulesMOSFETMOSFET
RoHSY-Y
ProductPower MOSFET Modules--
TypeHigh Voltage--
Vgs Gate Source Voltage20 V20 V20 V
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-268S-3TO-268HV-2TO-268-3
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
PackagingReel-Tube
ConfigurationSingleSingleSingle
BrandIXYSIXYSIXYS
Transistor PolarityN-ChannelN-ChannelN-Channel
Fall Time39 ns60 ns18 ns
Id Continuous Drain Current1.5 A1 A1.5 A
Pd Power Dissipation250 W195 W60 W
Product TypeDiscrete Semiconductor ModulesMOSFETMOSFET
Rds On Drain Source Resistance40 Ohms50 Ohms11 Ohms
Rise Time25 ns35 ns19 ns
Factory Pack Quantity4003030
SubcategoryDiscrete Semiconductor ModulesMOSFETsMOSFETs
Typical Turn Off Delay Time132 ns78 ns20 ns
Typical Turn On Delay Time69 ns22 ns18 ns
Vds Drain Source Breakdown Voltage2500 V3 kV1 kV
Vgs th Gate Source Threshold Voltage2 V2 V-
Technology-SiSi
Number of Channels-1 Channel1 Channel
Qg Gate Charge-30.6 nC-
Channel Mode-EnhancementEnhancement
Transistor Type-1 N-Channel1 N-Channel
Height--5.1 mm
Length--16.05 mm
Series--IXTT1N100
Width--14 mm
Unit Weight--0.158733 oz
製造商 型號 描述 RFQ
Littelfuse
Littelfuse
IXTT1N250HV-TRL Discrete Semiconductor Modules High Voltage Power MOSFET
IXTT1N450HV MOSFET 4500V 1A HV Power MOSFET
IXTT1N300P3HV MOSFET DISC MOSFET N-CH STD-POLAR3
IXTT1N100 MOSFET 1 Amps 1000V
IXTT1N250HV MOSFET N-CH 2500V 1.5A TO-268HV
IXTT1N450HV MOSFET N-CH 4500V 1A TO268
IXTT1N300P3HV High Voltage Power MOSFET
IXTT1N100 MOSFET 1 Amps 1000V
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