MCH6601

MCH6601-TL-E vs MCH6601 vs MCH6601 , BUD600-SMD

 
PartNumberMCH6601-TL-EMCH6601MCH6601 , BUD600-SMD
DescriptionMOSFET PCH+PCH 2.5V DRIVE SERIES
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-363-6--
Number of Channels2 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current200 mA--
Rds On Drain Source Resistance10.4 Ohms--
Vgs Gate Source Voltage10 V--
Qg Gate Charge1.43 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation800 mW--
ConfigurationDual--
PackagingReel--
SeriesMCH6601--
Transistor Type2 P-Channel--
BrandON Semiconductor--
Fall Time130 nS--
Product TypeMOSFET--
Rise Time55 nS--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time120 nS--
Typical Turn On Delay Time24 nS--
Unit Weight0.000265 oz--
製造商 型號 描述 RFQ
ON Semiconductor
ON Semiconductor
MCH6601-TL-E MOSFET PCH+PCH 2.5V DRIVE SERIES
MCH6601-TL-E IGBT Transistors MOSFET PCH+PCH 2.5V DRIVE SERIES
MCH6601 全新原裝
MCH6601 , BUD600-SMD 全新原裝
MCH6601-TL-EX 全新原裝
Top