 |  | | |
| PartNumber | MCH6602-TL-E | MCH6602-NEC-TL | MCH6602-TL |
| Description | MOSFET POWER MOSFET | ||
| Manufacturer | ON Semiconductor | - | SANYO |
| Product Category | MOSFET | - | FETs - Arrays |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-363-6 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 350 mA | - | - |
| Rds On Drain Source Resistance | 3.7 Ohms | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 800 mW | - | - |
| Configuration | Dual | - | - |
| Packaging | Reel | - | - |
| Series | MCH6602 | - | - |
| Transistor Type | 2 N-Channel | - | - |
| Brand | ON Semiconductor | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Unit Weight | 0.000265 oz | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
ON Semiconductor |
MCH6602-TL-E | MOSFET POWER MOSFET | |
| MCH6602-TL-E | IGBT Transistors MOSFET POWER MOSFET | ||
| MCH6602-NEC-TL | 全新原裝 | ||
| MCH6602-TL | 全新原裝 | ||
| MCH6602-TL-EX | 全新原裝 |