| PartNumber | MRF6S18100NBR1 | MRF6S18060NR1 | MRF6S18060NBR1 |
| Description | RF MOSFET Transistors 1990MHZ 28V | RF MOSFET Transistors 1880MHZ 60W | FET RF 68V 1.99GHZ TO272-4 |
| Manufacturer | NXP | NXP | - |
| Product Category | RF MOSFET Transistors | RF MOSFET Transistors | - |
| RoHS | E | E | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Technology | Si | Si | - |
| Vds Drain Source Breakdown Voltage | 68 V | 68 V | - |
| Gain | 14.5 dB | 15 dB | - |
| Output Power | 100 W | 60 W | - |
| Minimum Operating Temperature | - 65 C | - 65 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-272-4 | TO-270-4 | - |
| Packaging | Reel | Reel | - |
| Configuration | Single | Single | - |
| Height | 2.64 mm | 2.64 mm | - |
| Length | 23.67 mm | 17.58 mm | - |
| Operating Frequency | 1.8 GHz to 2 GHz | 1.8 GHz to 2 GHz | - |
| Type | RF Power MOSFET | RF Power MOSFET | - |
| Width | 9.07 mm | 9.07 mm | - |
| Brand | NXP / Freescale | NXP / Freescale | - |
| Channel Mode | Enhancement | Enhancement | - |
| Moisture Sensitive | Yes | Yes | - |
| Pd Power Dissipation | 343 W | 21.6 W | - |
| Product Type | RF MOSFET Transistors | RF MOSFET Transistors | - |
| Factory Pack Quantity | 500 | 500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Vgs Gate Source Voltage | - 0.5 V, 12 V | - 0.5 V, 12 V | - |
| Vgs th Gate Source Threshold Voltage | 3 V | 3 V | - |
| Unit Weight | 0.067412 oz | 0.058073 oz | - |
| Series | - | MRF6S18060N | - |
| Part # Aliases | - | 935319261528 | - |