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NDD03N60Z

NDD03N60ZT4G vs NDD03N60Z vs NDD03N60Z-1G

 
PartNumberNDD03N60ZT4GNDD03N60ZNDD03N60Z-1G
DescriptionMOSFET NFET DPAK 2.6A 3.6RMOSFET N-CH 600V IPAK
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryMOSFETTransistors - FETs, MOSFETs - SingleTransistors - FETs, MOSFETs - Single
RoHSY--
TechnologySiSiSi
Mounting StyleSMD/SMTThrough HoleThrough Hole
Package / CaseTO-252-3--
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current2.6 A--
Rds On Drain Source Resistance3.3 Ohms--
Vgs th Gate Source Threshold Voltage4.5 V--
Vgs Gate Source Voltage30 V--
Qg Gate Charge12 nC--
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 125 C+ 125 C+ 125 C
Pd Power Dissipation61 W--
ConfigurationSingleSingleSingle
PackagingReelTubeTube
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandON Semiconductor--
Forward Transconductance Min2 S--
Product TypeMOSFET--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Unit Weight0.139332 oz0.139332 oz0.139332 oz
Package Case-IPAK-3IPAK-3
Pd Power Dissipation-61 W61 W
Vgs Gate Source Voltage-30 V30 V
Id Continuous Drain Current-1.65 A1.65 A
Vds Drain Source Breakdown Voltage-600 V600 V
Vgs th Gate Source Threshold Voltage-4.5 V4.5 V
Rds On Drain Source Resistance-3.3 Ohms3.3 Ohms
Qg Gate Charge-12 nC12 nC
Forward Transconductance Min-2 S2 S
製造商 型號 描述 RFQ
ON Semiconductor
ON Semiconductor 		NDD03N60ZT4G MOSFET NFET DPAK 2.6A 3.6R
NDD03N60Z-1G MOSFET N-CH 600V IPAK
NDD03N60ZT4G MOSFET N-CH 600V DPAK
NDD03N60Z 全新原裝
NDD03N60ZG 全新原裝
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