NE856M02-T1-A

NE856M02-T1-AZ vs NE856M02-T1-A vs NE856M02-T1-AZ/RF

 
PartNumberNE856M02-T1-AZNE856M02-T1-ANE856M02-T1-AZ/RF
DescriptionRF Bipolar Transistors NPN Low Distort Amp
ManufacturerCEL--
Product CategoryTransistors - Bipolar (BJT) - RF--
Series---
PackagingDigi-ReelR Alternate Packaging--
Part Aliases2SC5336-T1-AZ--
Mounting StyleSMD/SMT--
Package CaseTO-243AA--
TechnologySi--
Mounting TypeSurface Mount--
Supplier Device PackageSOT-89--
ConfigurationSingle--
Power Max1.2W--
Transistor TypeNPN--
Current Collector Ic Max100mA--
Voltage Collector Emitter Breakdown Max12V--
DC Current Gain hFE Min Ic Vce50 @ 20mA, 10V--
Frequency Transition6.5GHz--
Noise Figure dB Typ f1.1dB @ 1GHz--
Gain12dB--
Transistor PolarityNPN--
Continuous Collector Current0.1 A--
DC Collector Base Gain hfe Min250--
製造商 型號 描述 RFQ
CEL
CEL
NE856M02-T1-AZ RF Bipolar Transistors NPN Low Distort Amp
NE856M02-T1-A 全新原裝
NE856M02-T1-AZ/RF 全新原裝
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