 |  |  | |
| PartNumber | NPT2021 | NPT2020 | NPT2021-SMBPPR |
| Description | RF JFET Transistors DC-2.5GHz 45W Gain 16.5dB GaN HEMT | RF POWER TRANSISTOR | EVAL BOARD FOR NPT2021 |
| Manufacturer | MACOM | - | M/A-Com Technology Solutions |
| Product Category | RF JFET Transistors | - | RF Evaluation and Development Kits, Boards |
| RoHS | Y | - | - |
| Transistor Type | HEMT | - | - |
| Technology | GaN Si | - | - |
| Gain | 14.2 dB | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 160 V | - | - |
| Vgs Gate Source Breakdown Voltage | 3 V | - | - |
| Id Continuous Drain Current | 14 mA | - | - |
| Output Power | 45 W | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 85 C | - | - |
| Mounting Style | Screw Mount | - | - |
| Package / Case | TO-272 | - | - |
| Packaging | Tray | - | - |
| Configuration | Single | - | - |
| Operating Frequency | 2.5 GHz | - | - |
| Operating Temperature Range | - 40 C to + 85 C | - | - |
| Brand | MACOM | - | - |
| Moisture Sensitive | Yes | - | - |
| Product Type | RF JFET Transistors | - | - |
| Rds On Drain Source Resistance | 340 mOhms | - | - |
| Factory Pack Quantity | 25 | - | - |
| Subcategory | Transistors | - | - |
| Vgs th Gate Source Threshold Voltage | - 1.8 V | - | - |
| Unit Weight | 0.067412 oz | - | - |
| For Use With Related Products | - | - | NPT2021 |
| Series | - | - | - |
| Type | - | - | Transistor |
| Frequency | - | - | 0Hz ~ 2.2GHz |
| Supplied Contents | - | - | Board |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
MACOM |
NPT2021 | RF JFET Transistors DC-2.5GHz 45W Gain 16.5dB GaN HEMT | |
| NPT2022 | RF JFET Transistors DC-2.0GHz 100W Gain 20dB GaN HEMT | ||
| NPT2020 | RF POWER TRANSISTOR | ||
MACOM |
NPT2021-SMBPPR | EVAL BOARD FOR NPT2021 | |
| NPT2022-SMBPPR | EVAL BOARD FOR NPT2022 | ||
| NPT2022 | RF JFET Transistors DC-2.0GHz 100W Gain 20dB GaN HEMT | ||
| NPT2021 | RF JFET Transistors DC-2.5GHz 45W Gain 16.5dB GaN HEMT |