NTMY

NTMYS1D2N04CLTWG vs NTMYS2D2N06CLTWG vs NTMYS2D1N04CLTWG

 
PartNumberNTMYS1D2N04CLTWGNTMYS2D2N06CLTWGNTMYS2D1N04CLTWG
DescriptionMOSFET T6 40V LL LFPAKMOSFET TRENCH 6 40V SL NFETMOSFET N-CH 40V 258A
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseLFPAK-4--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current258 A--
Rds On Drain Source Resistance1.2 mOhms--
Vgs th Gate Source Threshold Voltage1.2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge52 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation134 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReelReel-
Transistor Type1 N-Channel--
BrandON SemiconductorON Semiconductor-
Fall Time22 ns--
Product TypeMOSFETMOSFET-
Rise Time8.1 ns--
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time79 ns--
Typical Turn On Delay Time14 ns--
製造商 型號 描述 RFQ
NTMYS1D2N04CLTWG MOSFET T6 40V LL LFPAK
NTMYS3D5N04CTWG MOSFET TRENCH 6 40V SL NFET
NTMYS4D1N06CLTWG MOSFET T6 60V LL LFPAK
NTMYS4D6N04CLTWG MOSFET T6 40V LL LFPAK
NTMYS3D3N06CLTWG MOSFET 60V 3.0mOhms 133A Single N-Channel
NTMYS2D9N04CLTWG MOSFET TRENCH 6 40V SL NFET
NTMYS2D2N06CLTWG MOSFET TRENCH 6 40V SL NFET
NTMYS1D2N04CLTWG Power MOSFET
NTMYS2D1N04CLTWG MOSFET N-CH 40V 258A
NTMYS2D2N06CLTWG TRENCH 6 40V SL NFET
NTMYS3D3N06CLTWG MOSFET N-CH 60V 100A
NTMYS3D5N04CTWG TRENCH 6 40V SL NFET
NTMYS4D1N06CLTWG T6 60V LL LFPAK
NTMYS4D6N04CLTWG T6 40V LL LFPAK
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